Intlvac’s Athena Nanoquest-I Broad Beam Delayering System delivers precise, contamination-free material removal for advanced IC analysis and device preparation. Using
Ion Beam Etching (IBE), it physically sputters away metals, alloys, semiconductors, insulators, and multilayer composites with nanometer-scale precision. By controlling ion energy, current density, and incidence angle, Athena ensures
uniform etching with less than
1% non-uniformity, preserving the native state of delicate materials. Unlike mechanical or chemical methods, IBE minimizes heat, radiation, and residue, maintaining measurement integrity.
Material selectivity is enhanced through optimized feed gases, enabling targeted etch rates and planarized surfaces without polishing slurries. Designed for reliability and repeatability, Athena provides a universal, high-precision delayering solution for semiconductor R&D and failure analysis.