IBS PULSION equipment meet < 10 nm requirements
Continued scaling of non-planar HP multigate devices in all aspects:
EOT, junctions, mobility enhancement, new channel materials,
parasitic series resistance, contact silicidation.
• Materials compatibility
• Process integration challenges
• Medium current production implanter for:
• RF and power devices, sensors, opto-electronics manufacturing
• on Si, SiC, GaAs, GaN, LiTaO3, HgCdTe, LiNbO3, InP
Key advantages
-High beam current
-Extended life ion source (>300 hrs)
-Enhanced single or multi-charged Al beam generation
-High resolution analyzer magnet for multi-charged and high AMU beams
-650 °C fast temperature ramp-up/ramp-down platen for SiC
-Optimized throughput for non Si materials
Features
-Quad implant, autotune up to 10 chained implantations
-From coupons to 200 mm, parallel scanning for 200 mm wafers
-Up to 1.2 MeV
-High efficiency ion sources (Indirect heated Cathode, ECR)
-Up to 8 different implant gases