Toho Koki Seisakusho Co., Ltd.

Demand for deep-UV LEDs is increasing due to the sterilizing effect of deep UV light and its use as an alternative to mercury lamps.

Achieving high efficiency and low cost have become major challenges for deep-UV LEDs. We overcame these challenges through joint research on sputtering and the annealing method with Mie University (Professor Miyake) and have realized the World's highest quality, high-efficiency, low-cost AlN template on a sapphire substrate.

The catalyst-referred etching (CARE) method, which was devised by Osaka University (Professor Yamauchi and Sano), is the world's first technology to enable planarization of substrates at the atomic level, where no affected layers (latent scratches) are formed.

It is drawing attention as a revolutionary slurry-free key process for next-generation semiconductor production.

Previously, to manufacture high-quality SiC substrates, it was necessary to produce SiC with good crystallinity, which entailed high costs due to technical issues.

By using bonding technology to bond high-quality SiC substrates to low-cost SiC substrates, we can manufacture SiC substrates that are both high quality and low cost.