SENTECH Instruments GmbH

  • 小間番号1815

Experts in Thin Film Measurement & Plasma Process Technology

SENTECH – clusters for MEMS and Nanotechnology

SENTECH equipment for plasma processing is combined to cluster solutions for R&D and production. Etching (ICP-RIE, RIE and ashing) and deposition processes (ICPECVD, PECVD, PEALD and ALD) can be stringed to together for applications in semiconductor, sensor, and nano technology, fully automated. Based on PTSA-ICP plasma source, the systems offer low damage, high rate, and low temperature processing for the manufacturing of quantum devices, semiconductor lasers and diodes, very high frequency devices, refractive and diffractive micro optics, and micro electromechanical devices.

SENTECH develops, manufactures, and globally sells innovative capital equipment focused on deposition, structuring and characterization of thin films in semiconductor technology, microsystems, photovoltaics, nanotechnology and materials research.  SENTECH provides innovative solutions for non-contact, non-invasive optical quality control and characterization using ellipsometry and reflectometry. SENTECH supports Chinese customers with SENTECH China Sales Office.


    Plasma Enhanced Atomic Layer Deposition System • PEALD with Planar Triple Spiral Antenna (PTSA) inductive coupled plasma source for best thin film uniformity < 1 % • Sample size up to 330 mm diameter and 100mm height • Stress control using RF bias ...

  • Optical coating in the nanometer-scale requires a high level of accuracy regarding layer properties such as thickness, composition, conformality and stress control. In order to ensure an excellent uniformity and conformality in layer-thickness, atomic layer deposition (ALD) is used for depositing optical thin films applied as e.g. antireflective coatings or optical fi lter systems. SENTECH uses the advantages of the Planar Triple Spiral Antenna (PTSA) ICP source in ICPEALD processing. SILAYO enables a homogeneous processing up to sizes of 330 mm in diameter and a vertical dimension up to 100 mm. Furthermore, the SILAYO is optionally equipped with RFbiasing allowing the modification of the layer properties (e.g. stress and refractive index). SILAYO features deposition on 330 mm substrates and 3D substrates.
    Combining PECVD and ALD in one Reactor Low damage and low temperature multilayer deposition Inductively coupled plasma source Low temperature (<100°C) and low damage deposition Affordable solution for multilayer deposition...

  • The SIPAR combines plasma enhanced chemical vapour
    deposition (PECVD) and atomic layer deposition (ALD) in one
    reactor benefitting from more than 15 years of experience
    at SENTECH with ICP technology.
    The revolutionary system allows the sequential deposition
    with ALD and PECVD without transferring the substrate
    between different reactors, enabling the fast and precise
    deposition of multilayers.
    The SIPAR system is designed for efficient deposition of
    hybrid multilayers composed of uniform and conformal
    deposited ALD layers and rapidly growing ICPECVD films
    using our proprietary ICP plasma source.
    Low damage, low temperature deposition combined with
    lower price, higher throughput, and smaller footprint makes
    the SIPAR favourable compared to a cluster solution.
  • Spectroscopic ellipsometer SENresearch 4.0
    It covers the widest spectral range from 190 nm (deep UV) to 3,500 nm (NIR). High spectral resolution is offered to analyse even thick films up to 200 µm thickness. No moving optical parts during data acquisition for best measurement results. ...

  • The SENresearch 4.0 covers the widest spectral range from
    190 nm to 3500 nm and the highest spectral resolution in the
    NIR by FTIR ellipsometry.
    The Step Scan Analyzer (SSA) principle is a unique feature of
    the SENresearch 4.0. The field upgradeable 2C design allows
    full Mueller matrix measurement.
    The SENresearch 4.0 comes with SpectraRay/4 – SENTECH
    comprehensive software for ellipsometry data acquisition and
    analysis. Every individual SENresearch 4.0 spectroscopic
    ellipsometer is a customer-specific configuration of spectral
    range, options and field upgradable accessories.
  • ICP-RIE plasma etcher SI 500
    The SI 500 represents the leading edge for ICP processing in research and production. Flexibility and modularity are design cha racteristics of the SENTECH SI 500....

  • A wide range of etch processes including
    III-V compounds (e.g. GaAs, InP, GaN,
    InSb.), dielectrics, quartz, glass, silicon
    and silicon compounds (SiC, SiGe) are
    The SENTECH proprietary planar triple
    spiral antenna (PTSA) produces a truly
    inductive high density plasma (reactive
    species, ions, electrons) at low operation
    pressure with low dc self-bias at the
    substrate proven by low damage etch of
    quantum dots and wires. The highly efficient
    coupling of the ICP rf power to the
    plasma results in high aspect ratio etch
    processes even at low plasma power.
    Dynamic temperature control using
    resistance heating against the external
    liquid cooling circuit guarantees constant
    substrate temperatures independent from
    the applied plasma power. Etch performances
    of via holes in Si, GaAs, and SiC
    demonstrate the optimal process control
    at high rate etching necessary for deep
    etching applications.
    Extremely smooth sidewalls in trenches
    and ridges can be achieved by using
  • ICP plasma deposition system SI 500 D
    Exceptional high density plasma Planar ICP plasma source Outstanding properties of deposited layers Dynamic temperature control...

  • The SI 500 D plasma deposition tool represents the leading-edge for plasma enhanced chemical vapor deposition of dielectric films, a-Si, SiC, and other materials. It is based on PTSA plasma source, separated gas inlets for reaction gasses, dynamic temperature controlled substrate electrode, fully controlled vacuum system, advanced SENTECH control software using remote field bus technology, and a very user friendly general user interface for operating the SI 500 D.

    A large variety of substrates from wafers up to 200 mm diameter to parts loaded on carriers can be processed in the SI 500 D plasma deposition system. The single wafer vacuum loadlock guarantees stable process conditions and allows for easy switching between processes.

    The SI 500 D plasma enhanced deposition tool is configured to deposit SiO2, SiNx, SiONx, and a-Si films in a temperature range from room temperature up to 350 °C. Solutions are available for the deposition of TEOS, SiC, and other materials with liquid or gaseous precursors. The SI 500 D is especially suited for the deposition of high efficient protection barriers on organic materials at low temperatures and damage free deposition of passivating films at well defined temperatures.

    SENTECH offers different levels of automation ranging from vacuum cassette loading to one process chamber up to six port cluster with different deposition and etch modules targeted to high flexibility or high throughput. The SI 500 D is available as process module on cluster configuration as well.


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