Best Compound Semiconductor Co., Ltd

GaNエピタキシャルウエハ

GaN-on-Silicon technology is the most suitable solution for low-cost mass production of high-voltage, high-power, and High Electron Mobility Transistors. GaN can be used in high voltage environments due to excellent physical properties such as low on-resistance, high switching frequency, high heat conductivity, and high breakdown electric field. Best Compound Semiconductor Co., Ltd. provides high-quality AlGaN/GaN epitaxy infrastructure on the top of 6"/8” silicon wafers for 650V FETs device manufacturing and also accepts customized GaN epitaxy requirements.

SiCエピタキシャルウエハ

SiC (Silicon carbide) plays the most important role in the development of the third-generation semiconductor. SiC can be used in high voltage environments (> 1200V) due to excellent physical properties such as lower on-resistance, higher switching frequency, better heat conductivity, and higher breakdown electrical field. Compare to Silicon, SiC has better performance and a wider range of power applications. 4"/6" SiC epitaxial wafers always have strong demand in the worldwide market. Best Compound Semiconductor Co., Ltd. provides high-quality 4"/6" SiC epitaxial wafers for 650V, 1200V, and even higher voltage device manufacturing, and also accepts customized SiC epitaxy requirements.