The scia Mill 200 is designed to structure complex multilayers of various materials. Different end-point detection systems can be equipped for exact process control. With its fully reactive gas compatibility, the system enables reactive etching processes with enhanced selectivity and rate. The flexible design of the scia Mill 200 allows it to be adapted as a single substrate version as well as in a high-volume production cluster layout with up to three process chambers and two cassette load locks.
Features & Benefits
• Etching angle adjustment with a tiltable and rotatable substrate holder
• Excellent uniformity without shaper
• Enhanced selectivity and rate with reactive gases
Applications
• Structuring of magnetic memory (MRAM) and sensors (GMR, TMR)
• Milling of metals in MEMS production (Au, Ru, Ta, …)
• Milling of multilayers from diversified metal and dielectric materials
• RIBE or CAIBE of compound semiconductors (GaAs, GaN, InP, …)
• Production of surface relief gratings (SRG)
• Ion beam smoothing for reduction of microroughness