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This is our flagship product that employs a 50kV acceleration voltage to achieve a good balance between microfabrication and resist sensitivity. Two models are available: an Academic and R&D model for various applications such as research and development, and a Production model for production of DFB-LD for optical communications.

Beam Diameter :< 2 nm Φ (for Academic and R&D), < 4 nm Φ (for Production)
Acceleration Voltage : 50 kV, 30 kV
Stage : Compatible with 4", 6", 8" wafers

Features:

• Multi-user support with simplified operability and added functionality
• Supports Windows based dedicated CAD, GDS II and DXF (optional)
• TFE electron gun employing single crystal ZrO/W
• Minimum beam diameter of 2 nm at an acceleration voltage of 50 kV
• High stitching and overlay accuracy
• Outstanding beam current and beam position stability
• Field size modulation function / Patented (Achieved 0.0012 nm minimum address size)
• Chirped gratings also can be fabricated
• Provided with a thermal controller

By adopting a high acceleration voltage, this electron beam lithography system suppresses forward scattering of electron beams in the resist, enabling finer processing. The lineup of 110 kV and 90 kV is also available according to your applications and budget.

Beam Diameter : < 1.6 nm φ
Acceleration Voltage : 130 kV, 110 kV, 90 kV
Stage Size : 8-inch wafer or smaller

In an electron beam lithography system, a stable electron beam with high voltage for a long period of time is required. To achieve this, micro-discharge must be zero. However, high voltages are always accompanied by discharge phenomena, and micro-discharges inevitably occur. Crestec has developed a new electron optical system with a structure that virtually eliminates the generation of micro-discharges, enabling stable operation over long periods of time.
The acceleration voltage of 130 kV is generated by single-stage acceleration, which is shorter than that of conventional multi-stage acceleration electron guns. This single-stage acceleration design has realized an electron optical system with low aberration and little Coulomb blur. As a result, it is possible to produce higher resolution images at a higher current than before. In addition, compared to 50kV, 130kV high-acceleration writing has less forward scattering of electron beams in the resist, enabling finer processing.