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SCHOTT glass carrier wafers and panels are designed for advanced semiconductor processes such as 2.5D/3D IC, FOWLP, and FOPLP. Made from premium borosilicate and alumino-borosilicate glass, they enable reliable temporary bonding, thinning, and debonding with exceptional mechanical and chemical stability.

Our carriers feature ultra-low total thickness variation (TTV), outstanding flatness, and high optical transmission from UV to IR—ideal for laser-assisted debonding. A broad CTE range ensures optimal thermal matching with various device substrates.

Produced to SEMI standards and cleanroom-packaged, SCHOTT glass carriers are process-ready and traceable. Available as wafers (150–300 mm) and panels (up to 650 × 650 mm), they combine precision, durability, and versatility to meet the demands of next-generation semiconductor manufacturing.

SCHOTT Glass Panels are engineered for advanced IC substrates and interposers, enabling high-density interconnects and heterogeneous packaging. With a precisely tailored CTE range (3.2–7.2 ppm/K), high stiffness, excellent dielectric properties, and superior flatness, they deliver outstanding signal integrity and thermal stability.

Available in panel formats up to 650 × 650 mm (typically 510 × 515 mm), SCHOTT Glass Panels offer high geometrical precision, minimal warp, and ultra-smooth surfaces ideal for fine-line lithography and through-glass via (TGV) formation.

Through our structuring expertise and partner network, we support high-performance laser structuring and metallization for complex, high-density designs. As a cost-effective, customizable solution, SCHOTT Glass Panels enable next-generation IC and RF packaging with higher data rates, greater I/O density, and reliable integration for co-packaged optics and system-in-package technologies.

SCHOTT® low-loss is an advanced borosilicate glass engineered for high-frequency communication, sensing, and semiconductor applications. With a dielectric constant of Dk = 3.9 and extremely low dielectric loss (tan δ = 0.0014 @ 10 GHz), it enables efficient RF designs and reliable signal transmission.

The material offers outstanding surface quality (Ra < 2 nm*) and low thermal expansion (CTE = 3.1 × 10⁻⁶ K⁻¹), ensuring high rigidity and stable glass-to-metal interfaces. Its excellent structurability supports advanced chip packaging, including Antenna-in-Package (AiP) and other 5G/6G solutions.

Available in various thicknesses, SCHOTT® low-loss combines precision, durability, and scalability — setting a new standard for dielectric performance in next-generation electronic systems.