The EVG®580 ComBond® covalent bonding system for engineered substrate and power device production integrates advanced surface preparation processing steps to ensure contamination- and oxide-free bonds at room temperature. Combining materials with different properties to produce electronic devices, such as III-V compound semiconductor materials like gallium nitride (AaN), gallium arsinde (GaAs) and indium phosphite (InP) with silicon substrates, can lead to enhanced device performance and open up new capabilities.
Built on a modular platform to support high-volume manufacturing (HVM) requirements, the EVG®ComBond system can bond nearly anything on anything to enable new applications including:
- Multi-junction solar cells
- Silicon photonics
- High-vacuum MEMS packaging
- Power devices
- Compound semiconductor and other advanced engineered substrates for “beyond CMOS” applications such as high-mobility transistors, high-performance/low-power logic and radio frequency (RF) devices.