SILICON CARBIDE (SiC) SUBSTRATES
The unique electronic and thermal properties of silicon carbide (SiC) make it ideally suited for advanced
high power and high frequency semiconductor devices that operate well beyond the capabilities of either
silicon or gallium arsenide devices. The key advantages of SiC-based technology include reduced switching
losses, higher power density, better heat dissipation and increased bandwidth capability. At the system level, this results in highly compact solutions with vastly improved energy efficiency at reduced cost.
The rapidly growing list of current and projected commercial applications utilizing SiC technologies include
switching power supplies, inverters for green (solar and windmill) energy generation, industrial motor drives,
HEV and EV vehicles, smart grid power switching and wireless communication base stations