SK Materials Co., Ltd.

Gyeongsangbuk-do, 
Korea (South)
http://www.ocim.co.kr/
  • Booth: 4006

 

OCI Materials is the first to localize specialty gas, NF3(Nitrogen Trifluoride), in Korea that solely relied on imports. Since the first NF3 Plant completed in 2001, OCI Materials has expanded rapidly in volume and adding other items such as WF6(Tungsten Hexafluoride), SiH4(Monosilane), SiH2Cl2(Dichlorosilane) and Si2H6(Disilane) becoming a global leading specialty gas company. Being a late starter in specialty gases, through aggressive investment and continuous R&D, OCI Materials has achieved the highest production capacity in NF3 and high quality management system.OCI Materials now provides a stable supply of excellent high quality specialty gases to large multinational companies in IT industry.

Especially, OCI Materials’ main focus is on aiming ‘Zero accidents’ with our experienced know-how and certified safety management system. Through establishing our vision ‘Safe Today, Happy Tomorrow’, I believe we can make a great workplace and share our core values such as environment, safety and happiness.

 

 


 Products

  • NF3 (Nitrogen Trifluoride)
    NF3 is used during the manufacturing process of semiconductor, TFT-LCD and Solar cells, ans it removes residues from inner wall of the chamber after CVD manufacturing process. ...

  • ■ Specification

     [Unit : ppmv]

    NF3

    O2+Ar N2 CF4 CO CO2 N2O SF6 HF H2O
    99.999% 1.0 1.0 10.0 1.0 1.0 1.0 1.0 1.0 1.0

     

     

     

  • WF6 (Tungsten Hexafluoride)
    WF6 is used in patterning semiconductor to form metal contact during CVD manufacturing process. ...

  • ■ Specification

     [Unit : ppbw(metal), ppmv(gas)]

     

    WF6

    K U Th Cr Fe Na Mo Al Cu Mg Ni Ca Co Zn Mn Pb
    99.9995% 10 0.1 0.1 10 10 10 25 10 10 10 10 15 10 10 10 10

     

    WF6

    O2+Ar N2 HF CO CO2 SiF4 SF6 CF4
    99.9995% 1.0 1.0 1.0ppmw 1.0 1.0 1.0 1.0 1.0

     

     

     

     

     

  • SiH4 (Monosilane)
    SiH4 is used for Si-centered film deposition for semiconductor, a-Si deposition upon glass plate for TFT-LCD and anti-reflection coating of Solar cells. ...

  • ■ Specification

     [Unit : ppmv]

    SiH4

    O2+Ar N2 H2 CO CO2 CH4 H2O

    99.9999%

    (Excluded H2)

    1.0 1.0 20.0 0.1 0.1 0.1 1.0

     

     

  • SiH2Cl2 (Dichlorosilane)
    SiH2Cl2 is a gas used for thin film silicon deposition and epitaxial silicon deposition. ...

  • ■ Specification

     [Unit : ppmv]

    SiH2Cl2

    O2+Ar N2 CO CO2 CH4 H2 SiH3Cl SiHCl3 SiCl4

    99.9%

    1.0 1.0 1.0 1.0 1.0 10.0 100 100 100

     

  • Si2H6 (Disilane)
    Si2H6 is used for rapid, low-temperature silicon deposition during the shrunk semiconductor process. ...

  • ■ Specification

     [Unit : ppmv]

    Si2H6

    O2+Ar N2 CO2 CH4 SiH4 Si3H8 Si4H10 Chlorosilane Siloxane H2O

    99.99%

    1.0 2.0 1.0 1.0 500 50 50 0.2 3.0 1.0