NANOTECH Inc.

Yongin-si, Gyeonggi-do, 
Korea (South)
http://www.nanotek.com
  • Booth: G801


(주)나노텍을 방문해 주셔서 감사드립니다.

(주)나노텍은 1993년 레이저 광학, 광전자 분야의 신기술 개척을 목적으로 한 알텍을 설립하여 1998년 법인 전환 후 현재까지 광계측 센서 분야 기술 중심의 전문 기업으로 꾸준히 성장하고 있습니다.

특히 플라즈마 발생 기술과 스펙트럼 분석 기술을 접목한
SPOES 센서를 순수 국내 기술로 개발하여 국내 반도체 제조 산업의 경쟁력 향상에 기여하고 있으며 해외 센서 업체들과 대등한 기술 경쟁을 벌이고 있습니다. 그 밖에도 광학 기술을 기반으로 한 각종 센서 제품군을 개발하여 그 기술력을 인정받고 있으며, 특화된 기술 인력, 축적된 경험을 바탕으로 고객 요구에 부합하는 최상의 서비스를 제공하기 위해 노력하고 있습니다.

인류 미래를 풍요롭게 할 광기술의 무한한 성장 가능성과 함께 커나갈 나노텍은 사회적 책임감을 가지고 연구 개발에 매진하고 있습니다.


 Products

  • SPOES
    소형 Plasma Module을 내장하여 반도체/디스플레이 제조 설비의 배기 라인으로 배출되는 Gas를 분석함으로써 공정 변화 상태를 모니터링하는 센서...

  • 특장점

    √ 국내 시장 점유율 1위 !
    √ 풍부한 해외 납입 실적 (미국,일본,중국 4,000여대)
    √ 내구성 향상을 위한 다양한 기술 보유
    √ 안정적인 시스템 구조 및 데이터 처리 방식
    √ 다양한 공정 적용 경험 및 노하우

    Customer Benefits
    √ Technical expertise, all products developed our own technology
    √ Continuous upgrade in the application in response to customer feedback
    √ H/W, S/W customization options available to fit customer needs

     

       1. Application
        - PVD, (PE)CVD, (PE)ALD, Etcher,  all TM @semiconductor/display manufacturing
        - Ti TM/PM, W PM, WN TM/PM/Ex, TSN TM, C&C(Si etch) TM, OxALD PM, Diffusion PM
        - In-situ leak detection
        - ALD Source monitoring
        - Dry cleaning endpoint optimization
        - Process fault detection
        - In-situ fault detection caused by any chamber condition’s changes
        - Necessary in-situ gas monitoring to prevent unexpected process accident
       2. Features
        - RF plasma ignition : 0mT~10Torr
        - In-situ monitoring for 200~850nm
        - Use highly sensitive CCD sensor(2,048pixels)
        - Advanced EPD algorithms : Fine leak detection algorithm, Life time management
      3. SPOES vs. RGA (in CVD/ALD/Etcher processes)
    SPOES
    Features
    RGA
    0mT~10Torr
    Pressure range
    < 5x10-3Torr
    Good
    In-situ monitor
    Impossible because of damaging
    from reactant gases such as F, Cl
    No need
    Additional pumping
    Need
    No need
    Internal filament
    Need
    Possible
    Self cleaning
    Impossible
    Window & Tube (>1 year)
    Maintenance parts (Period)
    Filament (< 3 months)
    Operating Principles
    Specification
    Category
    Item
    Description
    Pressure Starting Pressure of Discharge 0mT~10Torr
    Composition Detectors / Controller 1~4 (Max. 12)
    Optic CCD Sensor 2048 pixels / 16bits
    Spectral Range 200~850nm (UV to NIR)
    Optical Resolution <±0.5nm
    Integration Time Min. 7ms
    Scan Time (Interval Time) Min. 50ms
    Optical Window Sapphire
    Power CCD Plasma Source Power Max. 30W
    Power Requirement 3.5A/12VDC
    Operation Operating System Windows XP, Windows7
    Software AOS (AEGIS Operating Software)
    Communication Ethernet
    Protocol TCP/IP, SECS, SECSII/GEM, SSCP
    Customiztion options available
    Mechanic Additional Pumping N/A
    Vacuum Interface ISO NW25 (Reducer Available)
  • EPD/OES
    반도체/디스플레이 제조 공정 챔버 내부의 Plasma를 분광 분석법으로 분석하여 공정의 종료점을 자동 검출하거나 공정의 변화 상태를 모니터링하는 센서...

  • This is our EPD(End Point Detection)/OES(Optical Emission Spectroscopy) solution designed for detecting endpoint and monitor process state change in the semiconductor and display manufacturing using plasma spectroscopy technology.

    특장점

    √ 낮은 가격 !  최고의 성능 !
    √ 고객 요구 사항에 따른 최적의 모델 제안 및 신속한 커스터마이징
    √ 안정적인 시스템 구조 및 데이터 처리 방식
    √ 다양한 공정 적용 경험 및 노하우

     

    Customer Benefits

    √ Control the process accurately and stably
    √ Improve production yield-rate
    √ Respose to the changes of process promptly
    √ Available optimized solution for H/W or S/W to detect an endpoint

     

    Application

    √ End Point Detection, Process fault Detection
    √ Dry etcher/Asher/PECVD @Semiconductor/display manufacturing
    √ Increase throughput by determining the optimal etch time
    √ Detect process endpoint through in-situ monitoring optical change in the plasma chamber

     

    Features

    √ In-situ monitoring for 200~850nm
    √ Use highly sensitive CCD sensor(2,048pixels)
    √ Advanced EPD algorithms : Differential threshold method, Window method

     

    Operating Principles
    Specification
    Category
    Item
    Description
    Composition Detectors / Controller 1~ 7ch, Max.12 (Available More Addition)
    Optic CCD Sensor 2048 pixels / 16bits
    Spectral Range 200~850nm (UV to NIR)
    Optical Resolution <±0.5nm
    Integration Time Min. 7ms
    Scan Time (Interval Time) Min. 50ms
    Optical Fiber SMA905 type Connector, 4m
    Condensing Lens Module (Optional)
    Electric Power Requirement 0.8A/12VAC
    Operation Operating System Windows XP, Windows7
    Software AOS (AEGIS Operating Software)
    Communication Ethernet
    RS232, Digital I/O (Optional)
    Protocol TCP/IP, SECS, SECSII/GEM, SSCP
    Possible to modify and develop by customer’s request
    Mechanic Material (Body) Anodized Aluminum
    Dimension 103(W) x 54(H) x 137(D) mm
    Weight ~1.2kg
    Viewport Interface Optionally Provided According to Customer’s Request or Equipment
  • 챔버 플라즈마 모니터(Pulsed Plasma Monitor)
    Pulsed Plasma를 사용하는 Etching, Deposition 등의 공정에서 실제 Pulse 파형이 정확히 유지되고 있는가를 실시간 Monitoring 하는 광학 센서...

  • 특장점
    √ Time Resolution : 1 micro second !
    √ 1~20kHz 범위의 Pulsed Plasma Repetition Rate 측정
    √ 챔버 외부 Viewport에서 측정하므로 공정에 영향을 끼치지 않는 안전한 방식
    √ 간편한 설치. 도입 및 유지비용 저렴

    Customer Benefits

    √ Improve production yield-rate
    √ Separate sensing, not affect the process
    √ Optimized solution for HW/SW to detect plasma fault
    √ Easy and simple to build in low cost

    System Configuration
      1. Chamber Viewport에 장착되는 Sensor Module의 Lens를 통해 광신호 수신
      2. 광신호를 전기적 신호로 변환
      3. A/D 변환하여 PC로 TCP/IP 고속 전송
      4. PC에 설치된 Nano2PM S/W를 통해 Pulse Plasma의 파형 분석
    Specification
    Category Item Description
    Optic
    Lens Module 2” Optics
    Sensor Si Photodiode
    Spectral Range 350~1100nm
    Electric
    Pulse Frequency Measuring Range 1~20kHz
    Time Resolution 1μs
    A/D Resolution 16bit
    Sensor Rising Time 10ns
    Sensor Active Area 13㎟ (3.6 x 3.6mm)
    Power Input 220VAC (via Power Adapter)
    Power Requirement DC7V 7W
    Connector (4pin Tiny QG) Male Connector, DSP Board Power Supply
    Connector (Ethernet TCP/IP) 10 Base-TX/100 Base-TX RJ-45 Interface 1 port, cable auto detect
    Mechanic
    Material (Body) Anodized Aluminum
    Dimension 108(W) x 110(H) x 140(D) mm
    Weight ~0.9kg
    Software
    O/S Microsoft Windows (.Net Framework 4.0)
    Sensor Connection Count 1 ~ 2
    Function Rising/Falling Time, Pulse-on/off Time, Period, Frequency,
    Peak/Average Value etc
  • Filter type EPD (NEFL Series)
    Filter type EPD detects variation of specific light distributed by the band-pass filter....

  • Customer Benefits

    - Control the process accurately and stably
    - Improve Production yield rate
    - Cope with the changes of process promptly

    - Suggest the optimized solution for HW or SW to detect an endpoiny

    Application

    - EPD (End Point Detection) 
    - Dry etcher, Asher etc.

    - can be applied where necessary to increase throughput by determining the optimal etch time

    Features

    - In-situ monitoring for filtered wavelength of 10nm bandwidth 
    - Use highly sensitive single Si photodiode 

    - Advanced EPD algorithms such as threshold and window method

    Customer Cases

    - PR asher: single/multi layer, single/multi recipe 
    - More than 3,000 are operated in semiconductor mass production line

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