Annealsys

The AS-Master system is 200 mm cold wall chamber Rapid Thermal Processor. The system can receive a susceptor with a maximum outer diameter of 240 mm for processing 200 mm wafers or batch of smaller wafers.

The cold wall chamber technology provides significant advantages: high process reproducibility, higher cooling rate, accurate temperature measurement and contamination free environment.

Several halogen lamp furnaces versions are available with a high temperature version that can perform processes up to 1450°C. The cold wall chamber technology associated with the pulse control mode of the lamp furnace allows processing thermally sensitive substrates.

The fast cooling option increases the cooling rate by 4 times compare to conventional RTP systems.

The system can be provided with customized loading systems including loading of the wafers on or into graphite susceptors for annealing of materials with low infrared absorption.

The AS-Premium is a 6-inch infrared lamp RTP system that has been designed to be versatile with different configurations to meet customer requirements

The process chamber can be provided with top heating or top and bottom heating. The system can be used for R&D application with manual loading and can be provided for production application with cassette to cassette loading or a cluster tool.

The high vacuum capability combined with a loadlock offers ultra-clean process conditions for processes that are very sensitive to oxygen or moisture contamination.

The machine can be used for a wide range of applications including optoelectronics, MEMS, power components (SiC, GaN), silicon smoothening, etc.

The Annealsys MC-100 system is a 4-inch (100 mm) DLI-CVD / DLI-ALD reactor dedicated to complex oxides deposition.

The association of the heating system with the direct liquid injection vaporization system makes this system unique for material research. It offers the capability to deposit most of the materials of the periodic table with multi process capability inside the same process chamber.

The Direct Liquid Injection (DLI) vaporizers provide perfect control of precursor flow and allow utilization of low vapor pressure and diluted chemical precursors. The fast switching of the precursor vapor flows with the by-pass valve provide perfect interface control for deposition of nanolaminates.

The automated liquid panel is optimized for reduced consumption of chemical precursors. The no dead volume design provides full rising capability for easy change of chemicals and refilling of the precursor tanks in a glove box.

Applications: oxides, metals, nitrides, 2D materials (TMD), etc.

The AS-One is available as a 100 mm or a 150 mm cold wall chamber RTP system. The vacuum and gas mixing capabilities are standard features. High temperature versions are available for a process temperature up to 1450°C or 1300°C with extended process durations. The AS-One is a manual loading system which is used for process development and small scale productions applications for MEMS, sensors and Leds.
The cold wall chamber technology provides significant advantages: high process reproducibility, higher cooling rate, accurate temperature measurement and contamination free environment.
Annealsys proprietary fast PID temperature controller provides accurate temperature control from room temperature up to the maximum temperature of the furnace with overshootless capability. Associated with the cold wall chamber, the pulse control mode of the lamp furnace allows processing thermally sensitive substrates creating a temperature gradient between the substrate and the layer to be annealed.
The fast cooling option increases the cooling rate by at least 4 times compare to conventional RTP systems. High vacuum option with turbo pump is also available.
A RTCVD version of the machine is proposed for the deposition of 2D materials like graphene and hexagonal boron nitride. A special configuration allows performing ALD processes using high vapor pressure chemical precursors for the deposition of Al2O3, ZnO and some other materials.

The Zenith-150 system can process samples up to 6-inch diameter at temperature up to 2000°C for one hour. It is specially developed to meet the requirements of research laboratories. The Zenith has the fastest ramp rate for high temperature annealing with 4°C/s up to 1800°C.

The system has a stainless steel water-cooled chamber. The cold wall chamber technology provides significant advantages: high process reproducibility, low memory effect, higher cooling rates.

The high temperature tungsten heaters provide enhanced temperature uniformity. The system is not compatible with oxidizing atmosphere and the installation of a turbo pump is mandatory.

Both pyrometer and thermocouple temperature measurement are standard features. The fast digital PID temperature controller provides high and stable temperature repeatability (± 1°C). The system assures accurate and repeatable thermal control across the temperature range.

The design of the process chamber provides easy loading and unloading of the substrates and the installation of the thermocouple for the pyrometer calibration.

Applications : Silicon Carbide implantation annealing, graphene by high temperature SiC sublimation, high temperature annealing