Rigaku Corporation

TOKYO, 
Japan
http://www.rigaku.co.jp
  • Booth: C762


RIGAKU - Leading with Innovation

Since its inception in Japan in 1951, Rigaku has been at the forefront of analytical and industrial instrumentation technology. In fact, Rigaku means physical science in Japanese, the core of instrumentation. With hundreds of major innovations to its credit, Rigaku and its subsidiary companies are world leaders in the fields of protein and small molecule X-ray crystallography, general X-ray diffraction, X-ray spectrometry, semiconductor metrology, automation, cryogenics and X-ray optics. Rigaku employs over 1,000 people worldwide in the manufacture and support of its analytical equipment. Whether supplying the tools to create better semiconductor chips, enabling drug discovery, improving production line quality, or exploring the new frontier of nanotechnology, Rigaku products and services lead with innovation. Rigaku was chartered to be the world's leading X-ray analytical instrumentation company.

 Products

  • XRF for Thin Film Evaluation : WaferX 310
    High-precision Analysis of Film Thickness, Composition, and Element Concentration (for Insulating Interlayer Films, High-k Films, Metal Multilayer Stacks, etc.)...

    • Various Applications
    Isolation films：BPSG, PSG, AsSG, Si3N4, SiOF, SiON, etc.
    High-k and ferro-dielectric films：PZT, BST, SBT, Ta2O5, HfSiOx, HfO2, etc.
    Metal films：Al-Cu-Si, W, Ti, TiW, Co, TiN, TaN, MgO, etc.
    Electrode films：doped poly-Si (dopant: B, N, P, As), WSix, Pt, etc.
    Others：doped films (As, P), trapped inert gas (Ne, Ar, Kr), C (DLC)
  • In-line X-ray Metal Film Monitor : MFM 310
    The MFM 310 can handle a variety of FEOL and BEOL films ranging single layers to multilayer stacks....

    • Cu interconnect: XRD evaluation of preferred crystal orientation of the Cu-plated layer.
    Barrier metals: XRR evaluation of film thickness, density, and roughness of each layer of a multilayer film,
    e.g. Ta/TaN, Ti/TiN (CVD, PVD).
    Gate dielectric films: XRR evaluation of film thickness, density, and roughness of various gate dielectric films, e.g. HfSiOx.
    CMP: XRF evaluation of film thickness, dishing and erosion of the wafer after Cu CMP.
    Silicide films: XRR evaluation of film thickness and density of WSix, CoSix, NiSix, etc.
    Ferro-dielectric materials: XRF composition evaluation of PZT films, BST films, etc. as well as XRD crystallinity determination.
    Others: Film thickness and composition evaluation of SiGe; XRD evaluation of preferred crystal orientation
    of Ta, W, WSix, Ti, TiN, etc.

Categories

200 Equipment, Assembly
  • Wafer Mount; Taping Equipment
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