Precursors, which induce chemical reactions by introducing various types of reactive gases into reactors during semiconductor fabrication, are used to deposit thin films of desired materials is expected with the refinement of semiconductors and the increase in layered structures.
*. Zr-Precursors: Zr-precursors are used in the manufacturing of capacitors for semiconductor DRAMs and in the depositing of ZrO2 thin films in the ALD process.
*. Si-Precursors: Si-precursors are used in the manufacturing of semiconductor DRAMs and 3D-NAND and in the depositing SiO2 thin films in the CVD/ALD process.
*. Ti-Precursors: Ti-precursors are used in the manufacturing of capacitors for semiconductor DRAMs and in the depositing TiO2 thin films in the ALD process.
*. Hf-Precursors: Used in the fabrication process of DRAM capacitors for semiconductor devices. Also used in HfO2 thin-film deposition as part of the ALD process.