Cu interconnect: XRD evaluation of preferred crystal orientation of the Cu-plated layer.
Barrier metals: XRR evaluation of film thickness, density, and roughness of each layer of a multilayer film,
e.g. Ta/TaN, Ti/TiN (CVD, PVD).
Gate dielectric films: XRR evaluation of film thickness, density, and roughness of various gate dielectric films, e.g. HfSiOx.
CMP: XRF evaluation of film thickness, dishing and erosion of the wafer after Cu CMP.
Silicide films: XRR evaluation of film thickness and density of WSix, CoSix, NiSix, etc.
Ferro-dielectric materials: XRF composition evaluation of PZT films, BST films, etc. as well as XRD crystallinity determination.
Others: Film thickness and composition evaluation of SiGe; XRD evaluation of preferred crystal orientation
of Ta, W, WSix, Ti, TiN, etc.