02-531-7800

OTSUKA ELECTRONICS KOREA CO., LTD.

Seongnam-si,  Gyeonggi-do 
Korea (South)
https://otsukael.co.kr/
  • Booth: B233


Hi, we are Otsuka Electronics Korea Co., Ltd.

With highly advanced optical technology,
Otsuka Electronics develops and provides measurement devices and optoelectrical testing systems

Otsuka Electronics Korea was established in 2003 and has grown as an independent R&D company. Now we are one of the world leaders making hundreds of contracts every year and exporting products worldwide.

We are constantly introducing innovative and creative products to contribute to the growth of the high-tech industry focusing on what we do and what we can achieve only as Otsuka-people.


 Press Releases


 Products

  • SF-3 | Si wafer thickness monitoring system
    SF-3 saves time and costs for quality inspection by performing thickness inspection in real-time during the processing of semiconductors or films....

  • To see in detail: https://otsukael.co.kr/semiconductor-sf3


     Features 

    • It is a non-contact, non-destructive thickness measurement method using optics

    • In the case of silicon, thickness measurements from 6 to 1300 μm are possible

    • Parameters can be set after spectrum analysis

    • It uses proprietary analytical engine technology and algorithms

    • The automatic mapping function is available to measure the thickness distribution

    • It measures the thickness of multi-layered and  each layer of temporary wafers

    • High-speed real-time monitoring - max. 60,000 points per 1 min - is possible during CMP, BG, and Final polishing(TTV, GBIR)


     Specifications 

    Model SF-3/200 SF-3/300 SF-3/800 SF-3/1300
    Silicon meas. thickness range 6 ~ 400μm 10 ~ 775μm 20 ~ 1,000μm 50 ~ 1,300μm
    Resin meas. thickness range 10 ~ 1,000μm 20 ~ 1,500μm 40 ~ 2,000μm 1,000 ~ 2,600μm
    Minimum sampling period 5kHz(200μsec.)
    Repeatability *less than ± 0.01%
    Measurement size **over about Φ20μm
    Measurement distance 50mm, 80mm, 120mm, 150mm, 200mm
    Light source semiconductor light source(laser class 3B product)
    Analysis method FFT analysis
    Interface LAN, I/O input/output terminal
    Power supply DC 24V specification(AC power supply unit sold separately)
    Size 123(W) x 224(D) x 128(H)mm
    Optional item other lengths of probes, AC power, aluminum reference, measured light detection target, fiber cleaner

    *the standard relative deviation of our standard sample AirGap(approx.1,000μm) at time of measurement(n=20)

    **design value at time of WD 80mm probe specification


     Measurement 

    Measurement item
    • Film thickness analysis(max. 5 layers)


     Applications 

    • Thickness measurement for Si wafer material

    • Air gap size

    • Grinding evaluation for silicon / compound semiconductor

    • 1.3mm / next-generation 450mm wafer

    • 775㎛ 300mm wafer

    • TSV wafer(Si layer thickness measurement on via)

    • Other materials(SiO2, film)

  • OPTM(UV SR) | Microscopic spectro-photometer
    Advances in technology have made the role of nanomaterials even more important. The OPTM series enable microscopic measurement and study than conventional products....

  • To see in detail: https://otsukael.co.kr/semiconductor-optm


     Features 

    • High-precision absolute reflectance measurement by microscopic spectroscopy (Multilayer film thickness, optical constant)
    • The functions for film thickness measurement are integrated into the head
    • An optical system that measures a wide wavelength range from UV to NIR
    • Non-contact, non-destructive high-speed micro measurement within 1 second per point
    • Safety mechanism guaranteed by the area sensor
    • A wizard function provided for beginners which enables optical constant analysis
    • Even complex optical constants can be analyzed using Multipoint analysis method
    • A macro function included that allows you to set the measurement sequence
    • A 300mm size stage can be equipped
    • It is customizable


     Specifications 

    Models

    Wavelength range Automatic XY stage type Fixed frame type Built-in head type
    230 ~ 800nm OPTM-A1 OPTM-F1 OPTM-H1
    360 ~ 1,100nm OPTM-A2 OPTM-F2 OPTM-H2
    900 ~ 1,600nm OPTM-A3 OPTM-F3 OPTM-H3

    Specifications Stroke Repeatability Stroke resolution
    Automatic XY stage type X: 200mm, Y: 225mm 2μm 1μm

    Specification selections(choose one for each item)

    Wavelength range Film thickness meas. range Detector Light source
    230 ~ 800nm 1nm ~ 35μm CCD deuterium + halogen
    360 ~ 1,100nm 7nm ~ 49μm CCD deuterium + halogen
    900 ~ 1,600nm 16nm ~ 92μm InGaAs halogen

    Type Magnification Measurement spot diameter Viewing field
    Reflective objective type 2x lens ∅ 100μm ∅ 4,000μm
    10x lens ∅ 20μm ∅ 800μm
    20x lens ∅ 10μm ∅ 400μm
    40x lens ∅ 5μm ∅ 200μm
    Visible refractive type 5x lens ∅ 40μm ∅ 1,600μm


     Measurement 

    Measurement items
    • Reflectance(absolute, relative)

    • Thickness(from Å to ㎛)

    • Optical constant(n, k)

    Measurable samples

    • Evaporated film for semiconductor/display fabrication

    • Coated film on PET or flexible substrate

    • Laminate film of transparent materials

  • GS-300 | Load port compatible film thickness meas.
    Identifying any defect or loss on a wafer immediate is a critical part of labs and manufacturers. GS-300 helps Si wafer measurement in real-time and understanding the wafer characteristics at a glance by visualizing the results in a color-coded grid....

  • To see in detail: https://otsukael.co.kr/gs300


     Features 

    • Compatible with the spare unit of Φ300mm EFEM port

    • Achieves pattern alignment of wiring patterns embedded in wafers

    • Responds to high throughput requirements of semiconductor process

    • Supports high precision notch alignment function
    • Minimized size allows installation in small spaces


     Specifications 

    Type Integration mapping system
    Stage type RθXY stage
    Measurement system microscope head + IR camera
    Max. wafer size Φ300mm
    Wafer angle correction function O
    Pattern alignment function O
    Wafer thickness range SF-3 thickness sensor specification
    Size 500(W) x 500(D) x 1680(H)mm (monitor and keyboard are not included)



     Measurement 

    Measurable samples(example)

    • Silicon thickness after grinding TSV embedded pattern wafer
    • Φ300mm thickness wafer
  • HS-1000H | High speed imaging spectroradiometer
    HS-1000H measures the optical characteristics flawlessly and promptly by combining the high-performance spectrophotometer and camera. ...

  • To see in detail: https://otsukael.co.kr/display-hs1000h


     Features 

    • High speed; suitable for a manufacturing process
      - Point: 1 ~ 30 times/sec

      - Area:  0.5 ~ 1 times/sec (with 20MP camera)

      (at 0.01 ~ 3000cd/m2, Standard light source A)

    • High-end spectrophotometer level of accuracy.

    • Sample measurement from smartphones to wide TV screens. (FOV, WD)

    • Compatible with various display types. (LCD, OLED, micro LED, mini LED)

    • Responds retroactively to national weighing standards. (KOLAS)


     Core technologies 

    New 2 in 1 hybrid system (high speed spectrophotometer + high resolution camera optimized for application)

    Customizable responding to customer product characteristics and manufacturing lines

    • Ultra-low/high-brightness optimization

    • Active Area Detection (High performance ROI identification function)

    • Tact time optimization

    • Calibration available at a production line

    Sample measurement in various size: small and large display, μLED, mini LED

  • ELSZ | Particle size, zeta potential, mw analyzer
    ELSZ-2000ZS is a master product measuring not only the particle size and molecular weight but zeta potential from dilute solution to concentrated solution....

  • To see in detail: https://otsukael.co.kr/elsz2000zs


     Features 

    • Higher sensitivity and shorter measurement time with new APD

    • Melting point and phase transition point analysis enabled by auto temperature gradient function

    • Wide temperature range between 0 and 90℃

    • Wide range molecular weight analysis

    • Supports concentrated sample measurement

    • High precision zeta potential analysis thanks to electro-osmosis measurement and plot analysis

    • Supports zeta potential measurement of salt condensed sample

    • Surface zeta potential of smaller area sample


     Specifications 

    Measurement
    principle
    particle size dynamic light scattering method (photon correlation method)
    zeta potential electrophoretic light scattering method (laser doppler method)
    molecular weight static light scattering method
    Optical
    system
    particle size homodyne optical system
    zeta potential heterodyne optical system
    molecular weight homodyne optical system
    Light source high power semiconductor laser
    Detector high sensitivity APD
    Cell particle size/molecular weight square cell
    zeta potential standard cell, small amount of disposable cell or concentrated cell
    Temperature 0 to 90℃ (with gradient function)
    Power supply 100V, 250VA
    Size and weight 380(W) x 600(D) x 210(H)mm, approx. 22kg


     Measurement 

    Measurement items

    Molecular weight 360 ~ 2,000x10^4
    Particle size 0.1 ~ 10,000nm
    Mobility -20x10^-4 ~ 20x10^-4cm²/V·s
    Zeta potential no limitation

    Measurement range

    Temperature 0 ~ 90℃
    Concentration

    *particle size: 0.00001%(0.1ppm) ~ 40%, zeta potential: 0.001% ~ 40%

    *Latex 112nm: 0.00001 ~ 10%, Taurocholic acid: ~ 40%


     Applications 

    Ideal for basic and applied research in surface chemistry, inorganic materials, semiconductors, polymers, biology, pharmacy, medicine, and other fields that handle not only fine particles but also the surface science of films and flat samples.

    • New functional material
      - Fuel cell(carbon nanotube, fullerene, function film, catalyst, nano-metal)
      - Bionanotechnology(nano capsule, dendrimer, DDS), nanobubble

    • Ceramic and paints
      - Ceramic(silica, alumina, TiO2)
      - Surface modifier, dispersion and cohesion of inorganic sol
      - Dispersion and cohesion of carbon black and organic pigment
      - Slurry state sample
      - Color filter
      - Flotation adsorption research

    • Semiconductor
      - Alien objects research on silicon wafer
      - Interaction research of abrasive/additive on wafer surface
      - CMP slurry

    • Polymer and chemical
      - Emulsion dispersion and cohesion
      - Surface modifier of latex
      - Function research of polyelectrolyte
      - Process control of paper production and pulp additive research

    • Pharmaceutical and food
      - Emulsion dispersion and cohesion
      - Dispersion/cohesion control of liposome and vesicle
      - Functionality of surfactant(Micelle)

  • Film thickness line scanner - in-line type
    Film thickness line scanner(in-line type) measures the full surface of film thickness using hyperspectral imaging at the production line....

  • To see in detail: https://otsukael.co.kr/line-scanner-inline


     Features 

    • Line-scanning method enables film inspection of the full surface without any dropout

    • Reliability guaranteed FFT analysis result

    • High speed, high precision measurement

    • No effect on the determination from film fluttering during operation
    • By arranging line scanners in a row, the wide sample can be measured at one-time(up to 10m in TD direction)
    • Originally designed hardware and software


     Specifications 

    Thickness measurement rage 0.7 ~ 300μm
    Measurement width 500mm ~ max. 10m
    Measurement interval 10msec ~
    Size and weight  81(W) x 140(D) x 343(H)mm, 4kg(Head only)
    Power AC100V±10% 125VA


     Measurement 

    Measured data

    > PET film thickness

    PET film has birefringence when enlonged, and the reflection spectrum is as shown in the figure. Our own processing method suppresses the effect of birefringence and enables highly accurate measurement.

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