NANOTECH Inc.

√ 국내 시장 점유율 1위 !
√ 풍부한 해외 납입 실적 (미국,일본,중국 4,000여대)
√ 내구성 향상을 위한 다양한 기술 보유
√ 안정적인 시스템 구조 및 데이터 처리 방식
√ 다양한 공정 적용 경험 및 노하우

Customer Benefits
 
√ Technical expertise, all products developed our own technology
√ Continuous upgrade in the application in response to customer feedback
√ H/W, S/W customization options available to fit customer needs 

   1. Application 
     - PVD, (PE)CVD, (PE)ALD, Etcher,  all TM @semiconductor/display manufacturing 
    - Ti TM/PM, W PM, WN TM/PM/Ex, TSN TM, C&C(Si etch) TM, OxALD PM, Diffusion PM 
     - In-situ leak detection 
    - ALD Source monitoring 
    - Dry cleaning endpoint optimization 
    - Process fault detection 
    - In-situ fault detection caused by any chamber condition’s changes 
    - Necessary in-situ gas monitoring to prevent unexpected process accident  
 
   2. Features 
    - RF plasma ignition : 0mT~10Torr
    - In-situ monitoring for 200~850nm
    - Use highly sensitive CCD sensor(2,048pixels)
    - Advanced EPD algorithms : Fine leak detection algorithm, Life time management 
 

This is our EPD(End Point Detection)/OES(Optical Emission Spectroscopy) solution designed for detecting endpoint and monitor process state change in the semiconductor and display manufacturing using plasma spectroscopy technology.

특장점

√ 낮은 가격 !  최고의 성능 !
√ 고객 요구 사항에 따른 최적의 모델 제안 및 신속한 커스터마이징
√ 안정적인 시스템 구조 및 데이터 처리 방식
√ 다양한 공정 적용 경험 및 노하우

Customer Benefits

√ Control the process accurately and stably
√ Improve production yield-rate
√ Respose to the changes of process promptly
√ Available optimized solution for H/W or S/W to detect an endpoint 

Application 

√ End Point Detection, Process fault Detection
√ Dry etcher/Asher/PECVD @Semiconductor/display manufacturing
√ Increase throughput by determining the optimal etch time
√ Detect process endpoint through in-situ monitoring optical change in the plasma chamber

Features 

√ In-situ monitoring for 200~850nm
√ Use highly sensitive CCD sensor(2,048pixels)
√ Advanced EPD algorithms : Differential threshold method, Window method

특장점 
√ Time Resolution : 1 micro second !
√ 1~20kHz 범위의 Pulsed Plasma Repetition Rate 측정
√ 챔버 외부 Viewport에서 측정하므로 공정에 영향을 끼치지 않는 안전한 방식
√ 간편한 설치. 도입 및 유지비용 저렴  

Customer Benefits 

√ Improve production yield-rate
√ Separate sensing, not affect the process
√ Optimized solution for HW/SW to detect plasma fault
√ Easy and simple to build in low cost