TECHNIC KOREA

Features

• Very stable electrolyte
• Low-stress deposit
• Smooth, bright deposit without the use of harmful metallic grain refiners
• Low deposit thickness variation across the wafer even with small and large features on the same die
• Able to deposit 2 – 3 times more gold in vias compared to a standard sulfite gold process
• Extended bath life of 4 – 5 metal turnovers in most applications
• Currently in production around the world in high volume manufacturing

Benefits

• Reduced cost of operation through:
- Extended bath life which significantly reduces the number of bath makeups per year
- Stable electrolyte eliminates scrap produced from bath plate-out
- Excellent coplanarity and step coverage resulting in less gold used per wafer
- High-speed plating increases wafer production capabilities
• Free of cyanide, thallium, and arsenic making it safe for operators and environmentally responsible.
• For use in plating tools from manual wet bench and R&D to fully automatic production lines.
• One of the most widely used and reliable sulfite gold chemistry in the semiconductor industry.

An advanced photoresist stripper that has a wide range of
applications from DUV to thick negative resins and passivation
layer reworking. Ideal for use in back end applications like TSV,
Cu pillar, bumping, etc. Offers complete resin dissolution of
thick film photoresist such as THB151N, THB121N, AZ125XT, etc.

Features
• Full dissolution of conventional spin-on photoresist
(N and P tones)
• High substrate compatibility
• Long bath life
• Can be used in a variety of applications
• Direct water rinse
• Suitable for batch (spray or immersion) and single wafer systems

Benefits
• Reduced cost of operation by higher throughput and higher loading capacity
• Minimized defects on fine-pitch technology by providing full resin/residue dissolution
• High metal compatibility (especially on Al) enabling improved process control and
performance for complex architecture metal stacks.
• Reduced cost of inventory through process versatility, allowing for the use of one
photoresist stripper for many applications.

Features
• Excellent selectivity

• Low undercut
• Improved etch uniformity
• Stable and consistent etch rate over the life of the bath
• Fluoride-free aqueous solution
• Compatible with most UBM and copper pillar integration materials
• Fully compatible with aluminum
• Tunable etch rate
Benefits
• High selectivity and low undercut provides high yields with fine pitch patterns
• Reduced cost of operation through extended bath life
• High process efficiency through stable chemistry and consistent etch rate
• Wide process operating window – 50% process overetch still results in minimal undercut

TechniStrip® NF52

Photoresist Stripper

High Dissolution, High Metal Compatibility NMP-Free Photoresist Stripper

Advanced Packaging for semiconductors continues to bring new challenges to material suppliers. In addition to requiring high performance, materials are also expected to be environmentally friendly. Alternatives to harmful legacy chemistries have had to be implemented without sacrificing results.

Historically chemistries such as NMP and hydroxylamine have been used to dissolve liquid and dryfilm resist. Through extensive research and development Technic has developed a series of products under the TechniStrip® name that offer high level performance and are free of NMP and hydroxylamine.

TechniStrip® NF52 is formulated to provide powerful stripping performance on difficult to remove dryfilm photoresist and is the product of choice for many leading semiconductor manufacturers.

Features

• Dissolution on most commercial dryfilm photoresist

• Dissolution of commercial spin-on photoresist (N & P Tones)

• Extremely low etch rate on Cu, Ni, Au and other materials

• Compatible with fragile III/V materials and organic substrates

• High stripping rate of > 10 μm/minute

• Long bath life

• Proven performance on both batch (spray and immersion)

and single-wafer toolsets

Benefits

• Reduced cost of operation achieved through a highly efficient process and longer bath life

• Reduced defects by providing full dissolution on most dryfilm and liquid photoresist

• High metal compatibility provides wider processing window and ease of operation

• CMR free (carcinogenic, mutagenic or toxic for reproduction) formulation reduces safety risk to operators

TechniEtch CN10 is a highly tunable, effective and selective metal etchant for UBM, RDL and copper pillar applications. The solution is an acidic based metal etchant containing specific additives that greatly enhance stability and metal loading capability compared to conventional oxidative acidic based solutions.

FEATURES AND BENEFITS
• Better process controllability/reliability.
 > Tunable etch rate by varying H2O2 concentration
 > Selectivity Cu/Ni up to 1/6
    Better NiOx and Ni intermetallic removal
 > High etch rate at room temperature.
• High stability even in presence of metal contamination
 > Profile and process control enhanced with the CN10 formulation additives compared to standard peroxide- acid approach.
• Loading & bath life independent of the solution loading

TechniClean IK73 applications:

• PER residues cleaning
 – After DRIE (CFx, CClx)
 – After ashing (organo-oxide metallic)
 – After HM / barrier punch through
 – On Al/Cu, CAP MIM

• Process
 – 30C, 30”- 180s
 – Direct water rinse
 – Ready used
 – Single wafer only
• IP filed 2017

TechniClean IK73 respond to:

• Industry new demand
• Process versatility
• Robustness
• Performance
• Selectivity (Mox/M)
• Compatibility