HAMAMATSU PHOTONICS KOREA CO., LTD.

You can analyze and localize failure points on your wafers or die samples by using a parameter analyzer/LSI tester, and to run test programs for both static and dynamic analysis. Our new laser scanner, high accuracy stage and new software bring you to next advanced level of fault localization.

The system is able to measure PL intensity and wavelength of all the individual micro LEDs on a 6 inch wafer in 30 min. And PL imaging system provide high sensitivity and spatial resolution (0.92um/pixel or Fine resolution mode : 0.46um/pixel).

The Dual PHEMOS-X is designed for advanced, 3D, nontransparent devices where simultaneous optical FA is required from both front and back on the wafer or die level.

The new current probe head can detect 10 pA* detectability with up to 3 KV high voltage power source. High sensitivity head has improved S/N 30 times higher than conventional one.

The PHEMOS-X is a high-resolution emission microscope that pinpoints failure locations in semiconductor devices by detecting the weak light emissions and heat emissions caused by defects. Various applications and combinations lead you to next fault localization stage.

Electrical characteristic measurement and spectrum analysis for micro LED device and 6um pad contact is available by using high accuracy stage and specialized probe pin.