Centrotherm International AG

The centrotherm c.ACTIVATOR has been developed for high-temperature annealing applications in highvolume SiC device manufacturing but it is also ideally suited for other materials.
There are two versions available providing wafer size capabilities up to 200 mm. The unique all metal free design of the centrotherm process tube and heating system allows process temperatures up to 2000 °C.

TYPICAL APPLICATIONS
• Electrical activation by post implantation annealing for SiC MOSFETs and diode manufacturing at high temperatures of up to 2000 °C
• Interlace annealing for engineered SiC substrates (e.g. SmartSiC, SiCkrest)
• Wafer-based stress and defect conversion (BPD-TED) annealings
• Annealing of AlN seed layers and AlN epitaxial layers at ~1700 °C
• High-temperature hydrogen annealing to smooth, clean and round trenches after (RIE) etching in order to improve channel mobility and reduce field crowding on sharp corners in trench MOSFET manufacturing

FEATURES & BENEFITS
• High activation rate
• Minimum surface roughness (with appropriate C-cap)
• Small footprint
• Continuous operation ≤1600 °C (c.ACTIVATOR 150) and < 1900°C (c.ACTIVATOR 200)
• All metal-free heaters and insulation
• Automated calibration
• Profiling thermocouple

OPTIONS
• Load lock - mini environment with N2 purge option
• Up to 25% throughput improvement
• Additional gas lines (e.g. H2)
• Automated wafer handling system
• Vacuum processing < 10-3 mbar
• Higher throughput > 100,000 wafers/year (depending on process)
• Dual boat for up to 30% throughput improvement
• Turbo pump and heated butterfly
• Lower base pressure
• Less sensitivity to photoresist solvent contamination

The c.OXIDATOR high-temperature furnace has been developed for the special needs of both SiC and Si oxidation. The high-volume furnace is available in two versions allowing wafer sizes up to 200 mm. Optionally c.OXIDATOR supports in-situ wet oxidation as well as H2 and NH3 annealing applications. Temperatures up to 1500 °C and all other supported features open up a wide range of possibilities to SiC oxidation and the development of an oxide layer with low interface trap density (Dit) and high channel mobility.
The outstanding reactor has been designed for high performance, small footprint and low cost of ownership while offering highest process flexibility. The tube and the heating element inside the vacuum
reactor chamber are designed for a safe use of toxic and flammable gases.

Post-oxidation annealing (POA) in NO, N2O or NH3 atmosphere leads to improved SiO2/SiC interface and thus higher channel mobility as well as improved stability and lifetime of the oxide on SiC.
H2 and H2O (O2 and H2-rich) are available for pre- and post-treatment of thermal and deposited gate oxides. Thanks to the corrosion resistant design, chlorine provided by a DCE bubbler can also be safely used without long-term damage to the door seal and exhaust line. Chlorine can be used to clean the SiC process equipment as well as for the process itself.
Due to its vacuum capability, c.OXIDATOR can be excellently used in the development, optimization and production of high quality thermal gate oxides, as well as for a variety of pre- and post-treatments, which are also essential for deposited oxides.

PROCESSES

• High-temperature SiC and Si oxidation
• POA (Post oxidation annealing) in NO, N2O or NH3 atmosphere
• Wet oxidation
• High-temperature H2 substrate pre-treatment

OPTIONS

• Hydrox for wet oxidation
• Automated wafer handling system

The stand-alone RTP system c.RAPID 200 has been especially developed for multiple process requirements in R&D and production lines. High performance and flexibility combined with low cost of ownership make it the best choice in rapid thermal processing. The capability to run a substrate on a susceptor or within a box in combination with atmospheric or vacuum operation enables a wide range of possible applications for compound semiconductors (e.g. forSiC or GaN). Its wafer surface-independent temperature controllability is unique among all existing RTP solutions. The pyrometer-based temperature measurement system enables processes at low and high temperatures. Independent lamp control combined with predictive PID control provides excellent thermal accuracy and repeatability.
c.RAPID 200 operates with a fully automatic loading system and is available as single or dual chamber version and with up to 4 cassette stations.

PROCESSES

Rapid Thermal Annealing (RTA)

• Ion implant annealing
• Contact/metal anneal
• Source/drain anneal
• Silicide formation (Ti, Co, Ni, Pt, etc.)
• PSG reflow
• Dopant activation

The centrotherm c.VERTICOO platform for batch-type wafer processing is ideally suited for many semiconductor device fabrication steps. The special design of process chamber and heating system provides maximum flexibility for all standard atmospheric and lowpressure CVD processes.

The stand-alone system is available as high-throughput version for mass production or mini-batch equipment for R&D and low-volume production. Both models are outstanding for high performance, small footprint, low cost of ownership and ease of maintainance.

The high-volume furnace c.VERTICOO 200 combines a single-tube setup with dual boat logistics and fullyautomated carrier-to-carrier wafer handling ensuringmaximum throughput with batch sizes up to 150 wafers.

The mini-batch furnace c.VERTICOO Mini meets the demanding requirements of semiconductor device R&D and allows customers to reduce development costs by processing a maximum of 50 wafers per batch.

PROCESSES

Atmospheric
• Dry oxidation
• Wet oxidation (centrotherm Hydrox)
• Annealing (H2, N2)
LPCVD
• Polysilicon (doped, undoped)
• Silicon nitride
• Silicon oxynitride
• TEOS oxide
• High-temperature oxide

FEATURES & BENEFITS
• Design features
• Auto alignment
• Dual boat logistics
• Water cooled heating cassette
• Small footprint (3.1 m2)
• Designed for side-by-side installation
• Internal storage for 20 carriers
• Maintenance features
• Main service access at rear side
• Hinged service monitor for easy access
• Fast and easy tube and liner exchange
• Large service doors

The centrotherm c.HORICOO 200 is a field-proven and ultra-versatile tube furnace system that is available for mass and medium volume production as well as for Research and Development.

It provides reliable process capabilities and high process performance for multiple applications, such as atmospheric and low pressure diffusion as well as LPCVD and PECVD processes. The process tubes can be configured for various processes with associated facilities. Within one furnace atmospheric, LPCVD or mixed-tube configuration can be installed.
All furnaces can be equipped with an integrated boat handling system as well as an integrated wafer transfer system. Interference between individual tubes is minimized by water-cooled heating cassettes.

The softlanding system enables repeatable wafer positioning within the tube, independent from wafer load. Ease of maintenance ensures low cost of ownership and a high uptime.
Processes

PROCESSES

Atmospheric processes
• Wet and dry oxidation (DCE, HCl)
• Diffusion (e.g. POCl3, BBr3)
• Annealing (H2, N2)
• Activation annealing
• Contact sintering
• Curing
• Nitridation
• Silicidation

LPCVD processes
• Polysilicon
• Doped Polysilicon
• Silicon Nitride
• Low stress Nitride
• TEOS | PSG | BPSG
• LTO | HTO
• Oxynitride
• SIPOS

Special processes
• Low-pressure diffusion (POCl3)
• Gallium pre-deposition and drive-in
• Aluminum pre-deposition/diffusion

FEATURES & BENEFITS

• Modular design for maximum flexibility
• Up to 5 stacked quartz or SiC process tubes
• Selectable process tube options available
• Quick and easy installation and start-up in clean room facilities
• Improved safety concepts according to SEMI standards
• Advanced water cooling system
• No thermal interference between individual tubes
• centrotherm CESAR II Software
• Modern touch operating HMI
• Remote control and maintenance possible
• All-in-one tube control
• SEMI-compliant recipe management