AP SYSTEMS CORPORATION

Next-generation semiconductor equipment enabling ultra-pure deposition films.

[Technology]

KORONA™ PEALD / PECVD enhance deposition rate, they can deposit thin films on 5~8 wafers simultaneously in a single chamber.

[Features]

High etch selectivity.

• Low Particle Generation and In-situ Cleaning Function

• Excellent film deposition rate & Throughput (A/sec)

• Excellent film thickness uniformity & Reproducibility (W to W)

• Excellent step coverage (>95%)

[Applications]

• EUV Pellicle Capping Layer

• New Gen. Memory Oxide channel layer

• High-k Metal Oxide layer

[KORONA™ Laser Debonder]

It is manufacturing process equipment that separates device substrates and carrier substrates using laser, optical technology, and process modules in semiconductor HBM / WLP / PLP manufacturing processes.

• Field proven high power Excimer Laser and DPSS Laser system

• Homogenized line beam delivery system / Spot beam Delivery System

• Compact system design for small foot print

• Complete automation & control solution with EasyCluster™ software

[KORONA™ Laser Dicing]

In the semiconductor analysis process, it is an equipment that cuts and separates semiconductor chips mounted on a wafer into cells through a laser and a high-precision scanner optical system.

• Purpose

- To cut and separate semiconductor chips mounted in the wafer by integrating femto-second laser and high-precision scanner optics

• Component

  - Laser : Femto green laser

  - Optics : Aperture scanner + Telecentric lens, Beam expander

  - Stage : XYZT-Axis Air bearing base stage 

  - EFEM : Robot / Load & Unload port / Aligner

  - Option : Cleaning module

• Features

  - Minimizing position accuracy with low thermal expansion stage structure

  - Fine cutting accuracy with high precision vision system

  - Optimizing process without damage to upper layer in multi-pitch ablation 

  - Minimized HAZ by applying femto-second laser and cold ablation method

KORONA^TM PVD600 series consist of multi-degassing, precleaning and sputtering modules for depositing UBM/RDL seed layers in advanced packaging.

Through a unique approach to wafer degassing, the cost of ownership savings can get more than 30%.

[Function/Enhancement]

• Deposition Process

• Precleaning Process

KORONA™ WG equipment is for the process of grooving multi-layered thin films made of low-K and dielectric materials on silicon wafers using the USPL(Ultra Short Pulse Laser).
The AP system's KORONA™ WG equipment can meet a wide range of customer needs with the optimized high-speed and precise motion technology and advanced laser processing technology and know-how using the ultra short pulse laser and specialized optical components.

[Features/Funtions]

• High Speed and Precision Motion

• Efficient Process Flow using Dual Pick and Placer

• homogeneous and Rectangular beam Profile

• Balanced Thermal Management and Performance

• Consistent Operating Program

Rapid Thermal Processing (RTP) equipment that treats wafers at high temperatures within a short period of time using a tungsten halogen lamp is applied to the oxidation process.

The advantage of RTP is that it can quickly heat or cool the temperature, which can significantly reduce heat consumption costs.

The RTP equipment of the AP system provides excellent temperature uniformity, wafer rotation, radiation compensation, and intelligent temperature control.

[KORONA™ RTP ATM]

• Chemical resistance

• Preventing contamincation & Particle& Fast purging

• Preventing wafer warpafe and stress

• Stable Spike Anneal Repeatability

• Stable Wafer Rotation

• Reflector Plate or Baseplate

• Temperature Controller (DSP) → Enhanced Temp.uniformity

• Reduced Cell Contamination in the O2 Analyzer

• In-house solution for Power Control

• Human Safety

[KORONA™ RTP Vacuum]

• Low pressure gas flow control.

• Controlling the distribution of film quality in wafers.

• High temperature heat source control window.

• Low pressure, high temperature process.

• Contamination and particle protection.

• Adjustable gas injector.

• Stable wafer rotation.

• Wafer distortion and stress prevention

• EFEM (protective rod, wafer scratch prevention, etc.)

[Features/Strengths]

•  Ultra-precise X, Y, Z, Theta, Spindle Stage (Repeat precision 1μm~2μm)

•  Precision stability and durability

•  Low-vibration structure design – Maximum X-axis speed of 0.36μm/sec at 1000mm/sec

•  Custom product manufacturing

[Applications]

• Semiconductor

  - Wafer dicing, Package dicing

  - SiC wafer, GaAs, Other wafers

• LED (Light Emitting Diode)

  - Mini LED, LED

• MLA (Micro Lens Array) Dicing for Automotive

  - 8’’ Glass Wafer (Thickness : 6mm, 9mm)

• Others

  - Seramic wafer, Glass wafer

  - PCB / Mobile camera filter