KOKUSAI ELECTRIC KOREA

▉ Overview

  AdvancedAce®Ⅱ is KOKUSAI ELECTRIC CORPORATION’s latest platform for batch thermal processing of 300mm wafers.

  The AdvancedAce®Ⅱ offers high throughput by utilizing advanced technologies in such areas as temperature control,

  wafer handling automation, reactor purging, and temperature ramping.

▉ Process Applications

  ・LP CVD                       ・Oxidation

  ・Anneal(Low temp, High temp) ・Diffusion

▉ Features

  ・Achieved high productivity: Improved 1.5times(*) larger lot

     processing in a time (* Compared with previous model)

  ・Capable of conformal films into deep trench

  ・Realized high accurate, high quality film deposition in low temperature

  ・Health check function (Option)

▉ Overview

  TSURUGI-C²^® 剱^® is KOKUSAI ELECTRIC CORPORATION’s new thermal processing platform which is most recently developed for

  advanced devices especially for the ones with high aspect ratio 3D structures requiring high quality, uniform and conformal film

  deposition with new innovative reactor design and process techniques.

▉ Process Applications

  ・Thin film deposition

▉ Features

  ・ New innovative reactor design

   - Provides thickness uniformity improvement with least loading effect

   - Shorten total cycle time with dramatically improved reaction gas purging

  ・ Low particle & High speed wafer transfer automation

  ・ High productivity, Small footprint

▉ Overview 

  MARORA^® is a suitable tool to provide gate dielectric film for next generation DRAM, logic or flash memory.

  With our original plasma generation method (MMT *), MARORA^® generates a plasma with low electron temperature (approx. 1eV)

  efficiently and realizes plasma damage free process.  *MMT＝Modified Magnetron Typed

▉ Process Applications

  Plasma Nitridation  

   ・Nitridation of dielectric film

  Plasma Oxidation   

   ・Forming thin oxidation film 

   ・Selective oxidation 

   ・Anisotropic oxidation

▉ Features

  ・ High throughput

   - 2 times better productivity than previous model

  ・ MMT plasma source is equipped

   - Realized highly uniform plasma at the surface of substrate

     and low electron temperature of plasma (~1eV)

  ・ Wide range temperature control

   - High temperature heater is installed

  ・ Various application

   - In addition to plasma oxidation or plasma nitridation, Selective Oxidation, oxidation of

     Si without oxidation of metal, is capable

▉ Overview

  TANDUO^® provides an optimized system for the process such as curing, annealing and degassing by module selection.

  We have achieved great productivity and low particle process environment with our original high-speed wafer transfer system.

▉ Process Applications

  ・Low temp Annealing   ・Curing

▉ Features

  ・Achieved high throughput with our original high-speed wafer transfer system

  ・Achieved highly uniform temperature control capability within wafer using

    our original susceptor heater

  ・Low contamination level

  ・Small footprint, high tool up-time

  ・Global tool sales record as a high throughput single wafer annealing system by high productivity.