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KOREA INSTRUMENT CO., LTD.

Hwaseong-si, Gyeonggi-do,  Korea (South)
http://www.kicl.co.kr
  • Booth: B800

Thank you for visiting to Korea Instrument.

Overview

Korea Instrument was established in May of 1996 in the city of Hwaseong in Gyeonggi Province, with the purpose of manufacturing and selling semiconductor equipment and components. We specialize in the production of semiconductor test devices known as probe cards. Korea Instrument is the sole domestic probe card manufacturer in Korea to offer a Total Probe Card Solution for both memory and non-memory applications.


  Press Releases

  • Korea Instrument's semiconductor probe cards enhance NAND, DRAM and HBM wafer testing effectiveness, supporting Korea global dominance in memory chips. Today, Korea Instrument uses its long-standing expertise to diversify offerings and advance semiconductor testing.

    OH SUNG-TAK | CEO OF KOREA INSTRUMENT

    Over the years, Korea Instrument has collaborated closely with Korean Chipmaker and OSAT. Given Korea’s industrial structure and growing competitiveness, do you believe now is an opportune moment for the Korean semiconductor ecosystem to diversify its portfolio and expand into more globalized systems?

    Yes, but I don't want to say it is an opportune moment. I think this is a challenge that needs to be done for sustainable growth and survival. Major Korean semiconductor companies such as Samsung and SK Hynix have firmly established themselves and achieved remarkable growth. However, for SMEs in Korea, internationalization and diversification are essential for survival and growth. By leveraging our long-standing expertise and partnerships, I think now is the right time to diversify globally and strengthen our competitiveness. This is not just a challenge, but also a window of opportunity for us to expand into new international markets.

    In that context, what opportunities do you foresee for Korea Instrument, particularly in areas like probe cards, which are crucial for semiconductor testing?

    Our primary business revolves around probe cards, which are indispensable in semiconductor manufacturing. Demand for these products will continue to grow. For example, as High Bandwidth Memory (HBM) adoption expands, the demand for probe cards will rise accordingly. We project steady growth in this segment through at least 2030, roughly a decade of sustained expansion.

    To prepare for the long-term growth of the memory market driven by AI trends, we have initiated development work on DRAM-related products, and earlier this year, Samsung approved our new probe card for both DRAM and HBM as well. Collectively, these developments point to significant opportunities in the coming years.

    At present, only a few global and Korean companies supply probe cards for HBM. This scarcity means growth potential is substantial. By 2030, we expect to see industry-wide growth rates of up to 10%. We intend to seize this opportunity by broadening our product portfolio, supplying DRAM and HBM probe cards to Samsung this year, high-end DRAM and HBM probe cards next year, and gradually expanding into even more advanced solutions.

    Beyond memory, you also mentioned the potential in LSI (Large-Scale Integration) markets. How does Korea Instrument intend to participate?

    The total probe card market size is estimated between $2.5B and $3B. Within this, the Logic market is estimated at $1.2B to $1.5B, similar to the Memory market, and is expected to grow by more than 7% annually through 2030, driven primarily by AI and automotive applications.

    Until now, we have been supplying Logic products to Samsung in the SoC and CIS sectors, as well as to OSAT companies in the Cantilever and DDI (Display Driver IC) segments, but we have faced limitations in expanding our market share. As a result, based on technology verified at Samsung LSI, we have developed probe pins with differential characteristics, such as long lifespan and high current-carrying capacity (CCC), to actively participate in the emerging VPC global market.

    In addition, to expand our reach to global Fabless, Foundry, and OSAT customers, we plan to conduct overseas marketing activities aimed at establishing international customer service bases and sales networks.

    Could you clarify the differences between logic chips and NAND memory, particularly in terms of challenges for probe card suppliers?

    In general, logic and NAND memory chips require the development of probe cards with ultra-fine pitches and extreme precision to keep pace with technological evolution, which optimizes yields in the testing process, reduces overall test costs, shortens the time-to-market for advanced chips, and enables high integration. A specific technical challenge common to probe cards is maintaining current-carrying capacity (CCC) and mechanical durability as the pins become thinner.

    The differences between logic chips and NAND memory chips in terms of probe card technology are as follows. Memory chip probe cards face the technical challenge of performing full-wafer contact tests with an increased number of DUTs (Devices Under Test) per wafer, requiring high parallelism through probe pins that satisfy both fine pitch and high precision.

    On the other hand, logic chips, such as APs and CPUs, have much higher IO integration than memory chips relative to the number of channels available between probe cards and testers. Therefore, it is not feasible to increase the DUT count at the wafer test stage to the same level as memory probe cards.

    Because a low DUT count requires multiple shots per wafer for inspection, the durability and precision of the probe pins must be further enhanced. Vertical-type probe pins are applied to handle finer pitches than those used in memory chips. Through the design of MEMS probe pins and the development of new materials, we have expanded business opportunities by demonstrating our technological capabilities in addressing these challenges. KI's Long Life, High CCC VPC products, which I mentioned earlier, are expected to perform well in the market, as they effectively address these technical challenges.

    With AI, 5G, IoT, and automotive sectors driving semiconductor demand, how do you assess long- and short-term growth opportunities across these fields?

    Artificial Intelligence is undoubtedly the strongest growth driver. As AI workloads expand, demand in the server and data center markets will increase dramatically. In contrast, the mobile phone sector faces limitations unless new breakthrough technologies emerge.

    From a mid- to long-term perspective, I believe servers and data centers will be the most dynamic growth segments. These applications require cutting-edge semiconductors produced at 2nm and below, often with complex 3D architectures. This creates both economic and technical challenges for testing. As requirements become more exacting, probe cards must evolve to match.

    At Korea Instrument, we are already preparing next-generation probe cards capable of supporting these fine processes, including DDR5 for servers and LPDDR for mobile applications. By the end of this year, we aim to deliver DRAM probe cards to customers, and from next year, expand into HBM.

    Korea Instrument has been a long-standing partner of Samsung. What differentiates your company from competitors in probe card manufacturing?

    Our biggest strength is our end-to-end integration. From the initial design stage through simulation, production, fabrication, and final assembly, we manage the entire process internally. This allows us to respond quickly and precisely to customer’s requirements.

    We also develop customized equipment exclusively for our use, ensuring we maintain technical independence and efficiency. Our simulation and electrical design capabilities, particularly in signal integrity and power performance, give us a one-to-two-year competitive lead over peers.

    Ultimately, what sets us apart is our ability to collaborate closely with clients from conception to delivery, providing consistency, speed, and tailored solutions that others struggle to match.

    How does Korea Instrument approach collaboration with global equipment suppliers across Japan or the U.S.?

    Collaboration is essential. In bonding equipment, technologies like fine pitch movement, laser power, and precision control must be integrated with probe card design. Without close cooperation, equipment cannot deliver full performance.

    From a perspective of test performance verification, currently, we are co-developing high-speed probe cards with one of global test maker, particularly for logic chip test. This kind of joint development is a model we intend to expand, not only with this company but also with other Japanese and American partners when opportunities arise.

    In memory, collaboration tends to be more predetermined with Samsung. But in LSI, because requirements are more specialized, joint development with equipment makers is both possible and necessary.

    Finally, what is your long-term vision for Korea Instrument?

    My vision is for Korea Instrument to become a truly global player in the probe card market. Within the next three to five years, we aim to move beyond our domestic leadership position and establish ourselves as a top-tier supplier in the global probe card market.

    We are already making progress: this year we entered DRAM and HBM supply, and in parallel we are preparing for expansion into the LSI sector, particularly in Taiwan and China. DRAM and LSI together will significantly expand our market share.

    Diversifying across both memory and LSI not only spreads risk but also strengthens our resilience. I believe this dual strategy is the right approach to ensure stability and long-term growth. Korea Instrument has the history, the technical foundation, and now the strategic ambition to play a central role in the global semiconductor ecosystem.


  Products

  • Cygnus : NAND Flash MEMS Probe Card
    - 1TD for 12" Wafer - Up to 3,100 DUT / 100,000 Pins - Utilizing MEMS Probes - 0.9A C.C.C. - 40℃ ~ 125℃ Operating Temp....

  • As the use of AI (artificial intelligence) expands, demand for next-generation memory products is increasing in data centers and AI servers. Next-generation memory products feature high capacity, high-speed computation, high performance, and low power consumption.

    FLASH memory can retain data regardless of power on/off and is applied to USBs, SD cards, SSDs, etc.

    The number of layers in 3D NAND is expected to increase from the current 200-300 layers to 500-600 layers within the next few years. Consequently, hybrid bonding technology is anticipated to be applied and expanded in 3D NAND, similar to DRAM. This brings challenges such as cell current management, new equipment process development, stress/warpage compensation processes, defect-free hybrid bonding technology, and XY cell miniaturization.

    KI is collaborating with the world's leading chipmakers to develop solutions for the increasing number of chip I/Os, driven by the trend toward higher integration and faster speeds in NAND Flash chips.

  • Orion : DRAM & HBM MEMS Probe Card
    - 1TD for 12" Wafer - Up to 2,500 DUT / 150,000 Pins - Utilizing MEMS Probes - Normal 0.8A / HBM 1.2A C.C.C - 40℃ ~ 125℃ Operating Temp....

  • As AI adoption accelerates, demand for next-generation memory products in data centers and AI servers continues to grow. These advanced memory solutions require higher capacity, faster computational performance, improved efficiency, and lower power consumption.

    High Bandwidth Memory (HBM) is a key technology that vertically stacks multiple DRAM chips and interconnects them through Through-Silicon Vias (TSVs) to dramatically increase data-processing bandwidth. Traditionally, HBM has been manufactured using a thermal compression (TC) bonding method, which relies on inserting fine micro-bumps between DRAM dies. However, as the number of stacked layers expands to 16 or even 20, this TC-based approach faces growing technical constraints. Within the limited HBM package height (maximum 775 µm), thinning each DRAM die or reducing die-to-die spacing provides only marginal relief.

    To overcome these limitations, DRAM manufacturers have been developing hybrid bonding technology, in which copper-to-copper interconnections are formed directly between chips or wafers. By eliminating micro-bumps, hybrid bonding can significantly reduce HBM package thickness, while simultaneously enabling higher I/O density and better thermal dissipation—both essential for next-generation AI workloads.

    KI is closely aligned with these technological trends and is actively collaborating with customers from the early development stage to support the rapid transition toward hybrid-bonding-based HBM solutions.

  • Taurus : MEMS Vertical Probe Card
    - Pitch : Min. 70㎛ Pitch Full array (50㎛ Under development) - Pin Count : 50,000 Pins+ - C.C.C (Mass production) : 0.6A~1.9A Mass production - C.C.C (Under Development) : 0.8A ~ 2.5A (Depend on pitch variable)...

  • As data traffic generated from various devices continue to surge, the demand for faster and more efficient logic chips solution is increasing. The logic chips are being packaged in smaller form factors, utilizing flip chips ball grid array (FC-BGA), wafer-level packaging (WLP), system in package (SiP) and system on chips (SoC) for higher integration.

    To keep pace with these advances, semiconductor manufacturers are facing to reduce the total cost of testing. The purpose of testing cost reduction is to eliminate unnecessary packaging of defectives, by conducting test at the wafer-level.

    Because the test active area for FC-BGA and SoC applications need to be expanded, while maintaining electrical and mechanical performance such as current carrying capacity, fine pitch, pin force, the probe card design complexity increases as well.

    To address these challenges, it is necessary to adapt vertical probe card solution.

    KI's wafer probe cards deliver precision and efficiency to address evolving test challenges and boast a long life span.

  • Sirius : MEMS CIS Probe Card
    Application - CMOS Image Sensor Features - Up to 64 DUT+ Image Test - All DUT Characteristic Uniformity - Min. 60㎛ Pad Pitch - > 20 Gbps - Optical Lens Module available - Short Scrub Mark - Probe Re-bonding available...

  • Image sensors convert light energy into electrical energy to generate images, performing a function similar to film within a camera.

    Alongside improvements in the performance of the pixel elements themselves, technological advancements are being made to enhance image quality and expand the range of sensor applications. This includes BSI (back-side illuminated sensor) processes for light reception, 3D stacking technology, high-performance ADCs (analog-to-digital converters), image signal processing, and the integration of artificial intelligence (AI) capabilities.

    KI's optical probe cards provide customized solutions for testing CMOS image sensors.

  • DC Parametric Probe Card (WAT)
    Application - DC Parametric (WAT) Features - Min. 80um pad pitch - Under 500fA leakage - 20~125 ℃ Operating Temp. Delivery - TAT : 2 weeks...

  • A DC Parametric Card is a specialized probe card used in semiconductor wafer testing to accurately measure DC electrical parameters of test structures on a wafer. It is a critical tool for process characterization, monitoring, and control throughout semiconductor manufacturing.