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HAMAMATSU PHOTONICS KOREA CO., LTD.

Seoul,  Japan
https://www.hamamatsu.com/jp/en.html
  • Booth: D222

Technologies for analysis & process monitoring.

Overview

Hamamatsu Photonics K.K. is a leading company to advance photonics technologies. We are handling photomultiplier tubes, imaging tubes, opto-semiconductors, and imaging and analyzing systems in Japan, North America, Europe, and Asia. 

In the SEMICON KOREA 2026, we will mainly showcase our product lineup that contributes to the semiconductor inspection and metrology fields.

  Press Releases

  • Hamamatsu Photonics K.K. is a leading company advancing photonics technologies. We handle photomultiplier tubes, imaging tubes, opto-semiconductors, light sources, lasers, and imaging and analyzing systems in the global market. At SEMICON KOREA 2026, we will introduce our key products that contribute to the growth of the semiconductor industry.
    Our primary highlight among the exhibits is the HyperGauge*1 Thickness measurement system, a new device designed to enhance productivity in semiconductor manufacturing processes. This product features our proprietary wavelength detection technology, “λ-Capture*2,” which uses a high-sensitivity camera to enable full-surface measurement of wafers up to 300 mm in diameter in just 5 seconds. The device offers both high resolution and excellent measurement reproducibility, making it suitable for both bare and patterned wafer inspection. Its introduction is expected to reduce process losses and improve yield in semiconductor manufacturing. 

    For further details, our staff will be pleased to provide a more indepth explanation at our booth. We look forward to welcoming you there. 

    *1: HyperGauge is registered trademark of Hamamatsu Photonics K.K. (EU, Japan, UK, USA). 

    *2: λ-Capture is registered trademark of Hamamatsu Photonics K.K. (EU, Korea, Japan, Taiwan, UK, USA). 

  Products

  • HyperGauge® Thickness measurement system
    The HyperGauge In-plane Film Thickness Meter achieves full-surface measurement of 300 mm wafers in just 5 seconds, boosting productivity in semiconductor manufacturing....

    • The HyperGauge Thickness measurement system C17319-11 employs a spectroscopic interference method for precise film thickness measurement. Equipped with the λ-Capture® technology*1, which detects wavelength shifts using high-sensitivity cameras without a spectrometer, it can measure the entire film thickness of up to 300 mm wafers in as little as 5 seconds. The device offers both high resolution and excellent measurement reproducibility, making it suitable for both bare and patterned wafer inspection. Its introduction is expected to reduce process losses and improve yield in semiconductor manufacturing. 

  • Quantitative Phase Microscopy (QPM) optical module
    QPM is an interference microscope module capable of detecting nanometer-scale defects. ...

    • The QPM optical module is an optical module designed to build a quantitative phase microscope (QPM), an interferometric microscopy system that achieves nanoscale vertical resolution. In addition to our current QPM product which images surface structures, we are now developing a new QPM product line that can image the internal structures of semiconductor devices. These development models include a visible wavelength type specialized for SiC/GaN/Glass and an SWIR wavelength type specialized for Si/GaAs.

  • iPHEMOS®-MPX
    Inverted Photo Emission microscope....

    • The iPHEMOS®-MPX is a high-resolution emission microscope that pinpoints failure locations in semiconductor devices by detecting the weak light emissions and heat emissions caused by defects.

  • Dual PHEMOS-X
    The ULTIMATE COMBO SYSTEM Dual side Failure Analysis for 3D devices....

    • The Dual PHEMOS-X is designed for advanced, 3D, nontransparent devices where simultaneous optical FA is required from both front and back on the wafer or die level.

  • PHEMOS®-X
    High-Resolution Emission microscope....

    • The PHEMOS®-X is a high-resolution emission microscope that pinpoints failure locations in semiconductor devices by detecting the weak light emissions and heat emissions caused by defects.

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