하마마츠 포토닉스 코리아

The HyperGauge Thickness measurement system C17319-11 employs a spectroscopic interference method for precise film thickness measurement. Equipped with the λ-Capture^® technology*1, which detects wavelength shifts using high-sensitivity cameras without a spectrometer, it can measure the entire film thickness of up to 300 mm wafers in as little as 5 seconds. The device offers both high resolution and excellent measurement reproducibility, making it suitable for both bare and patterned wafer inspection. Its introduction is expected to reduce process losses and improve yield in semiconductor manufacturing. 

The QPM optical module is an optical module designed to build a quantitative phase microscope (QPM), an interferometric microscopy system that achieves nanoscale vertical resolution. In addition to our current QPM product which images surface structures, we are now developing a new QPM product line that can image the internal structures of semiconductor devices. These development models include a visible wavelength type specialized for SiC/GaN/Glass and an SWIR wavelength type specialized for Si/GaAs.

The iPHEMOS®-MPX is a high-resolution emission microscope that pinpoints failure locations in semiconductor devices by detecting the weak light emissions and heat emissions caused by defects.

The Dual PHEMOS-X is designed for advanced, 3D, nontransparent devices where simultaneous optical FA is required from both front and back on the wafer or die level.

The PHEMOS®-X is a high-resolution emission microscope that pinpoints failure locations in semiconductor devices by detecting the weak light emissions and heat emissions caused by defects.