In the epitaxial process, silicon wafers are heated in an epitaxial furnace to around 1200°C, and vaporized silicon tetrachloride (SiCl4) and silane trichloride (SiHCl3) are added to the furnace to induce epitaxial growth on the surface of the wafers.
PERMA KOTE™ susceptors (SiC coated)--which have excellent thermal durability, chemical resistance, and dust resistance--are therefore extensively employed.
Moreover, because susceptors come into contact with the wafers, their dimensional precision and surface roughness affect wafer temperature distribution. SiC layers with high dimensional precision and smoothness are therefore required.
Thanks to proprietary technology for graphite substrate processing and SiC layer control combined with technical support that leverages our superb analytic capabilities, Toyo Tanso can offer the ideal product to suit your requirements.