ANAME PTE LTD

With the integration of precision step motor and sensor, the system is able to realize precise wafer loading and unloading with the help of a robotic arm, with a special cooling station. Similar to Elegant II-Y series, Elegant II A series also adopt a dual-hot chamber design and independent precursor line design concept, ensuring efficient precursor utilization and no cross contamination. Several upgrade ports are available to realize simultaneous processing using thermal and PE methods, which are suitable for mass production of compound semiconductor devices.

The vacuum transfer system ensures a completely automated transfer process with zero manual intervention, avoiding frequent vacuum breaks in the reaction chamber, thereby enhancing process stability and chamber lifetime. It can be equipped with high performance plasma generator, enabling both thermal and plasma-enhanced deposition processes in the same system without the need of hardware changes, This XY chamber arrangement provides more precise sequential process control, eg. nitride deposition followed by oxide deposition. Wafer size can be 12” and below. Process temperature range from RT to 500^oC. Upgradable components include turbo pump, up to 6 independent precursor lines, precursor heating (RT to 300^oC) and higher temperature modules, etc.

Customizable compartment sizes of 200X400 mm², 300X300 mm², 600X600 mm². It can accommodate wafer substrate as well as odd-size substrate. Process temperature range from RT to 300^oC. Upgradable components include up to 6 independent precursor lines, precursor heating (RT to 200^oC) and higher temperature modules, etc. It can process a wide range of oxide materials eg. SiO₂, SnO₂, HfO₂, Al₂O₃ and metal materials eg. Cu, Ru, etc. Applications include perovskite and advance packaging, etc.

The thermal ALD process chamber is equipped with self-cleaning function using ICP plasma, which helps improve the equipment reliability and reduce PM frequency, further enhancing its performance and competitiveness. It can be equipped with 1-6 single-wafer process chambers. Process temperature range from RT to 500^oC. Upgradable components include up to 6 independent precursor lines, precursor heating (RT to 300^oC) and higher temperature modules, etc. ALD materials that can be deposited include oxides, nitrides, metals such as SiO₂, SnO₂, HfO₂, Al₂O₃, AlN, SiN, TiN, Ru, Co, HZO, etc.

Highlights:

• Step coverage：＞97% 
• Particle：<10 @ 0.2μm
• Uniformity：<1% @ 12inch EE 10mm
• Maximum capacity：100 pcs 12inch wafer
• Throughput：> 20WPH
• Number of process chambers：Max 6 (T + PE)
• Process：14nm Logic, 19nm Memory
• Material：High k, Nitrides, Metal

The EM3 chamber features high quality chamber materials, an innovative heating system and a unique chamber design, a breakthrough achievement in advance process equipment for integrated circuit. The wafer temperature capability of up to 600^oC has the ability to achieve rapid thermal annealing at 600^oC, for the purpose of crystallinity improvement, film densification, stress relaxation etc. The system can be configured with 1-6 process chambers that comes with optional electrostatic chuck and wafer rotation capability. It is equipped with pre-processing and chamber cleaning functions. This system can simultaneously run a maximum total of 18 wafers, making it the highest throughput among the present single-wafer TH ALD equipment in the world.

EPI M300 can be used for silicon based homogeneous and heterogeneous epitaxial growth in 12“ logic, memory devices and epitaxial wafers. The patented pre-treatment ISSET chamber could achieve high quality surface treatment with minimum substrate damage. With the optimization of wafer transfer, placement, lifting and temperature control, the transfer system could achieve a significant increase of throughput for Si and SiGe epitaxy processes. The platform can be configured with a total number of 2 pre-treatment and 4 EPI process chambers, which meets the throughput requirement of mainstream foundries. It has batch load locks (up to 100 wafers) that prevent queue-time effect on product wafers.