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Oxford Instruments plc

Singapore,  Singapore
https://plasma.oxinst.com/
  • Booth: B1625

Welcome to meeting Oxford Instruments experts at booth#B1625

Overview

Advance your semiconductor fabrication and characterisation processes with Oxford Instruments’ full spectrum of solutions. Measure crystal homogeneity, material stress and strain in 3D with Raman imaging microscopy; characterise defects, roughness, elasticity and electronic properties using atomic force microscopy; evaluate structure and elemental composition with the electron microscopy techniques: EDS, EBSD, and the revolutionary BEX (Backscattered Electron and X-Ray); and achieve precise and consistent plasma etch, deposition and interface optimisation of micro- & nano-structures and films, using atomic layer etch, atomic layer deposition, ICP (etch & dep), PECVD and plasma polish techniques, with our plasma technology solutions.


  Press Releases

  • Exciting news! Semi Interface Magazine is back with Issue 2 - this time covering optoelectronics and datacom.

    Semi Interface magazine is one of the ways we communicate the value that Oxford Instruments brings to the compound semiconductor industry. It includes contributions from 22 authors & co-authors, 12 articles sharing industry expertise and looking at the most interesting aspects of the optoelectronics and datacom industry.

    This issue looks at how Generative AI has triggered a huge shift in the world of datacom technology and datacentre capacity, with automated production at larger wafer size becoming more critical than ever to meet datacom device volume demands. We have collaborated with industry leaders and market analysts, who share their valuable insights into datacom, microLEDs, augmented reality and more.

    Download the magazine here: Semi Interface Spring 2025 - Oxford Instruments

  • It is impressive just how many collaborations we have with Universities and prestigious research institutions around the globe. This is important to drive innovations that matter to our customers and accelerating breakthroughs that create a brighter future for our world. 

    I have shared a recent example to give a flavour of some of the events we are part of; a first of its kind week-long training course based at the University of York. This was partially funded by Innovate UK. It focussed on teaching core plasma skills with the objective to improve the level of plasma physics understanding across technical departments. Colleagues from Innovation, Engineering, and Software participated.

    This programme is a mixture of classroom and laboratory-based learning. It is the first programme internationally, for industry, that combines both classroom and laboratory-based learning in plasma physics. The combination of theory and discussions in the morning followed by reinforcement in the afternoon laboratory sessions was appreciated by the participants. The course was designed to not require any previous experience of plasma physics nor a physics-based background. 

    In January 2025, the second and residential will take place and the lessons from both programmes will be assimilated by the University of York so that this training can be offered across the semiconductor sector.

    If you are interested in finding out more, feel free to come to our booth #B1625 and talk to us!

    Leading Provider of Plasma Technology Tools & Systems - Oxford Instruments

  • You are touching upon the most important and complex topic in Semiconductor devices: all the device scientists and engineers will be interested in this topic. My heartiest congratulations to you."


    Dr Aryasomayajula Subrahmanyam
    Professor (Retd), Physics, IIT Madras, India

    Welcome to the first issue of Semi Interface, representing a community of technology experts with interesting insights to share for increasing device performance through material interface engineering and optimisation, as well as other semiconductor industry challenges.

    Our contributors share their vast experience, with one story demonstrating how interface optimisation history is repeating itself, plenty of discussion on the latest techniques for interface optimisation and material engineering, as well as insights on interface challenges of the near future.

    Download the magazine now: Semi Interface Autumn 2024 - Oxford Instruments


  Products

  • Atomfab for GaN (ALD) Application
    Plasma pre-treatment for interface optimisation prior to plasma ALD and high throughput plasma ALD for HVM power device fabrication...

  • Webpage: Atomfab ALD System - Oxford Instruments 

    Remote plasma ALD 

    - Large area (200 mm) remote CCP plasma 

    - Low damage and uniform across 200 mm 

    - Small chamber volume 

    - Designed for high volume manufacturing 

     

    Plasma ALD nitridation to remove Ga-oxide: In-situ pre-treatment of GaN surface 

    - In-situ plasma pre-treatment reduces interface defects (Dit) for improved GaN HEMT efficiency

    - High-quality plasma ALD Al2O3 films deposited 

    - >7 MV/cm breakdown 

    - >7000 WPM throughput for 20 nm Al2O3 

    - Optimised NH3 plasma pre-treatment for GaN HEMT validated with device characterisation 

    - Gate passivation by plasma ALD of Al2O3 results in superior electrical performance 

    - Pre-treatment and ALD performance is production qualified

    - High quality Al2O3 deposited by remote, low damage plasma ALD with low CoO 

    - Breakdown of >8 MV/cm with low leakage current and low hysteresis

  • PlasmaPro 100 Cobra ALE for GaN (ALE) Application
    Bulk etch using ICP for pGaN with ALE soft landing smoothing, recess formation for MISHEMTs using ALE & interface optimisation for power device production customers....

  • Webpage: PlasmaPro 100 ALE - Oxford Instruments 

    ICP & ALE for p-GaN HEMTs  

    - ICP etch for bulk of GaN layer 

    - ALE allows accurate etch control of remaining GaN/AlGaN 

    - ALE provides “soft-landing” onto AlGaN surface after GaN ICP etch  

    - Low damage, surface smoothing with ALE 

     

    Precise control of p-GaN etch depth with minimum damage on AlGaN surface is needed for higher-performance E-mode HEMT devices with higher drive current, lower off-leakage and improved dynamic on-resistance.1  

     

     

     (left) 50% reduction in AlGaN roughness with ICP & ALE process 0.4 nm (Ra) – OI data 

    1Zheng et al, High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application, Micromachines 2022,13, 589. 

     

    Partially-recessed gate MISHEMT - ALE with Etchpoint™ for Precise AlGaN Thickness 

    - ALE with Etchpoint utilised for precise AlGaN etch accuracy with 5 ±0.5 nm remaining AlGaN thickness 

    - Implemented in fabrication of partially recessed gate MISHEMT 

     

     

    In-situ reflectance end-pointing perfectly correlates with TEM measurements 

     

     

     

     

    ALE for interface optimisation 

    - Optimised endpoint detection (EPD) for GaN HEMT Etching 

    - Atomic layer etch for low, damage accurate etch control of AlGaN  

    - Optimised patent-pending UV wavelength endpoint control for ±0.5 nm accuracy 

     

    Fully-integrated LayTec EPD with Oxford Instruments PlasmaPro 100 Cobra ALE system 

  • PlasmaPro 100 Cobra ICP for SiC Application
    Plasma ICP etch module for trench & interface optimisation for power device production customers...

  •  

    Process Stability (during demo runs)A graph of a graph    AI-generated content may be incorrect. 

    # of wafers 

    Our OIPT SiC applications  

    1. 1. SiC plasma polish: A dry polish solution to prepare Epi-ready SiC and frontside processes for power applications 

     

     

    • - Preferential etching of damaged area. 

    • - Effectively leaving behind good crystal structure and approx. 50% Ra reduction. 

    • - Subsurface damage free surface with some leftover waviness 

     

    1. 2. Trench etch: Can achieve rounded corners (reduce field crowding), smooth sidewalls, no microtrench, high selectivity, high aspect ratios (HAR) 

     

    High selectivity 

    HAR 

     

    1. 3. Plasma ALD & ALE for interface optimisation: To improve reliability of power devices by surface smoothing and interface optimisation (less charge trapping/defects at multiple interfaces throughout the device) 

    Plasma ALD 

    • - Low deposition temperature 

    • - Wafer-scale uniformity 

    • - High growth rates 

    • - Surface pre/post-treatment 

    • - Improved film properties 

     

     

     

     

     

    Plasma ALE 

    • - Cyclic etch process. 

    • - Self-limited steps. 

    • - Process operates at very low bias for minimum damage. 

     

     

    Example: Work done with University of Warick - using ALE and ALD to improve Dielectric-SiC interface 

    • - Prepare trench surface using ALE/ plasma pre-treatment (OI process used for this work).  

    • - ALD dielectric (OI process used for this work). 

    Diagram of a bag with blue arrows    AI-generated content may be incorrect. 

  • PlasmaPro 100 Cobra ICP & Hot Esc for Datacoms
    Plasma ICP etch module for ridge & grating etch aimed at datacom transceiver production customers...

  • Webpage: PlasmaPro 100 Cobra ICP Etching System - Oxford Instruments  

    3” Wafer Marathon Data - Waveguide Process (Cl2/Ar) 

    • - Average number of particles added: 0.1 particles/cm2, > 0.5 µm. (average rate = 0.52 um/min) 

    • - Mechanical clean after 500 µm of InP etch as end of marathon was reached 

    • - Repeatability = +/- 2.2 /%

    • A screenshot of a computer screen    AI-generated content may be incorrect. 

     

     

    3” Wafer Marathon Data - Waveguide Process (CH4/H2/Cl2) 

    • - Average number of particles added: 0.3 particles/cm2, > 0.3 µm ((average rate = 1.45 um/min) 

    • - Mechanical clean after 240 µm of InP etch  

    • - Repeatability = +/- 2.0 /% 

     

     

    Hot ESC   

    Oxford Instruments has launched an innovative, newly designed hot ESC, that, after extensive testing at HVM customer facilities producing InP optoelectronic devices. The reliability of the resistively heated design (no hot oil), as measured by heat-cool cycles until component failure, has been significantly extended to deliver MTBF rates that are consistent with the requirements of HVM InP device manufacturers. It is an automated 6-inch wafer process with cross wafer uniformity of less than ±3%. In addition, the newly designed hot ESC has the capability to exceed the typical upper limit of processing temperature, which widens the process window to optimise ridge etch surface characteristics like smoothness, and micro-trench reduction by up to a factor of 10. Operating temperature range from 120 °C – 210 °C (250 °C optional) 

     

    Initial process results on 6”wafers using 

    • - Cl2/Ar chemistries  

    • - Full automation process 

    • - 150 mm ESC, max at 210 ºC 

     

    Parameter 

    Test 5.1 

    Etch Rate (nm/min) 

    >450 

    Selectivity 

    ~ 10:1 

    Profile (°) 

    89+/-1 

    Microtrench (%) 

    <3% 

    Foot (%) 

    ~10% 

    Uniformity 

    <+/-3% 

    Etched surface and sidewall  

    Smooth  

     

    Cost of Ownership 

    • - Mean Time To Clean (MTTC): < 8 hours 

    • - Mean Time Between Failures (MTBF): > 250 hours 

    • - Mean Time To Repair (MTTR): < 6 hours 

    • - Mean Time Between Clean  (MTBC): > 300 RF hours 

    • - Throughput 2095 wafers per month (24/7 operation 95% uptime) 

    • - <10% chamber to chamber matching  

    • - Minimum particle size: 0.3-1.2µm  

    • - >30 particle adders 

    • - We have work closely with our customers to refine CoO model and minimise cost per waferA pie chart with text and numbers    AI-generated content may be incorrect. 

    • Endpoint detection  

    • - Laser interferometry  

    • - Optical Emission Spectroscopy (OES) 

    General images from processes 

    Grating for DFB laser 

    Ridge waveguide etch for InP laser 

    Vertical profile etch for InP facet 

    Sloped mesa for InP photodiode 

  • alpha300 Semiconductor Edition
    The alpha300 Semiconductor Edition is a high-end confocal Raman and photoluminescence (PL) microscope specifically configured for the chemical imaging of semiconducting materials....

  • Benefits

    • Full inspection of up to 300 mm (12 inch) wafers
    • Non-destructive characterization of crystallinity, polymorphism, defects, strain and doping
    • Analysis of wide-bandgap semiconductors and layered structures
    • Surface analyses, depth scans and 3D imaging

    Key features

    • Industry-leading confocal Raman and PL microscope for high speed, sensitivity and resolution – simultaneously
    • Scientific-grade, wavelength-optimized spectrometer for high signal sensitivity and spectral resolution
    • Large-area scanning (300 x 350 mm) for wafer inspection
    • Active focus stabilization for large-area measurements (TrueSurface)
    • Vibration damping
    • Extensive automation for remote-control and recurring measurement workflows
    • Software for advanced data post-processing
  • Jupiter XR AFM
    The Jupiter XR Atomic Force Microscope is the first and only large-sample AFM to offer both high-speed imaging and extended range in a single scanner...

  • Jupiter provides complete 200 mm sample access and delivers higher resolution, faster results, a simpler user experience, and the versatility to excel in both academic research and industrial R&D laboratories.

    • Higher resolution than any other large-sample AFM
    • Extended range 100 μm scanner is 5-20× faster than most other AFMs
    • From setup to results, every step is simpler and faster
    • Modular design adapts to your needs for maximum flexibility

    Highest Performance

    • Higher resolution than any other large-sample AFM
    • Extended-range scanner is 5-20× faster than most AFMs and features large 100 μm X-Y & 12 μm Z range
    • Exclusive blueDrive™ Tapping Mode gives more reproducible results and simplifies operation

    Simpler User Experience

    • Fully-motorized laser and detector setup eliminates manual adjustment of knobs
    • Fully-addressable, high-speed stage rapidly reaches any point on 200 mm samples
    • Sharp top-view optics help you easily locate your precise region of interest
    • Go from atoms to large 100-μm scans and use any imaging mode, all with the single XR scanner

    Versatility for Diverse Research Needs

    • Support for a full range of imaging modes
    • Modular design makes it fast and simple to add accessories and future upgrades
    • Flexible software makes routine measurements easy while enabling advanced research
    • AR Maps - comprehensive analysis software for all types of AFM data

    Support that goes above and beyond your expectations

    • Includes a standard one-year comprehensive warranty
    • No-charge technical support and basic applications support for life
    • Affordable support agreements that offer extended warranties and advanced training
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