Zhejiang Hangke Instrument Co., Ltd.

Hangzhou,  Zhejiang Province 
China
https://www.hkyq.com.cn/
  • Booth: B2536

Overview

Zhejiang Hangke Instrument Co., Ltd. is a high-end equipment manufacturing company with a long history and rich technological heritage, headquartered in Hangzhou, China. The company focuses on semiconductor reliability test and special power supply fields, and is a professional testing solution provider, efficient testing system service provider, and leading electronic power equipment developer. Since its inception, the company has always adhered to client needs, insist independent research and development, and after decades of innovation accumulation, it now has burn-in screening equipment and testing systems covering the entire series of electronic components. It has also undertaken many national key engineering supporting tasks and has been repeatedly awarded for excellent quality. 
    The company currently has over 300 employees, with more than 50% being professional technical personnel, 68 patents in reserve,it has been awarded "provincial science and technology progress" multiple times for our ability of research and development. Its mature sales system and excellent after-sales team can quickly respond to client needs, and its products and services have reached all over the country, receiving long-term recognition from numerous clients.

  Products

  • LSIC 9000
    The system can perform HTOL test on the chip at room temperature +10°C~150°C. The output signal of the component is monitored in real time and the vector is automatically compared during the burn-in process.
    ...

    • Each burn-in board provides 10 programmable power supplies (0.5~10V/0~25A),
    and the power supply specifications can be customized individually
    Each burn-in board is available with 256 bidirectional I/O channels
    Each chamber can support up to 38kw of heat dissipation
    Vector files in STIL, VCT, VEC formats can be directly imported and used
    Chip BIST test is allowed
    Supports up to 24 independent temperature control workstations
    Full experimenter human safety considerations are set
  • IGBT power cycle test system
    The system is suitable for power cycling test of various sizes of IGBT modules and uses the advanced JEDEC static test method (JESD51-1) to generate temperature changes by varying the input power of the electronic component....

    • The system is suitable for power cycling test of various sizes of IGBT modules and uses the advanced JEDEC static test method (JESD51-1) to generate temperature changes by varying the input power of the electronic component. During the change, through transient temperature response curve of the tested chip and data processing of the test waveformto obtain the full thermal characteristics of the electronic component.
    Supports minute/second power cycling test
    Equipped with oil-cooled platform, which can quickly and automatically calibrate the K-factor of the component
    Fixture supports adjustable strength and depth for effective clamping of different packaging of modules
    With solenoid water valve, can automatically adjust the cooling water flow according to the actual situation, or manually adjust
    Through the transient temperature response curve of the test component, data processing of the test waveform to obtain the comprehensive thermal characteristics of the electronic component
    Full experimenter human safety considerations are set
  • Dynamic HTRB2000
    The system performs dynamic high temperature reverse bias burn-in test for SiC MOS transistor with reference to AQG324 test method. Up to 12 stations can be tested in each test area, with independent pulse source configurations....

    • The system performs dynamic high temperature reverse bias burn-in test for SiC MOS transistor with reference to AQG324 test method. Up to 12 stations can be tested in each test area, with independent pulse source configurations. RT +10°C~200°C test temperature is available for the device. It has the function of short-circuit disengagement test of test device, which can automatically detach the faulty device from the burn-in test without affecting the normal test of other devices.
    dv/dt>50V/ns (Coss<300pF)
    2us overcurrent protection
    It can be heated independently at room temperature +10°C~200°C, and is compatible with static HTRB test
  • Dynamic HTGB2010
    The system performs dynamic high temperature gate bias burn-in test capabilities for the third-generation SiC MOS transistor, and each test area can independently burn up to 12 work stations....

    • The system performs dynamic high temperature gate bias burn-in test capabilities for the third-generation SiC MOS transistor, and each test area can independently burn up to 12 work stations. Independently 12 configurable pulses, and the leakage current of the test gate does not interfere with each other. The device is available at room temperature+10°C ~ 200°C. It has the function of short-circuit disengagement test of test device, which can automatically detach the faulty device from the burn-in test without affecting the normal test of other devices.
    High-speed dv/dt>1V/ns
    nA leakage current test
    Threshold value voltage test
    Customized burn-in test boards are available for different device packaging, power requirements, etc.
    Full experimenter human safety considerations are set
  • Dynamic H3TRB2000
    The system performs dynamic high temperature and humidity reverse bias burn-in test for SiC MOSFET with reference to AQG324 for the test method. Up to 6 stations can be tested in each test area, with independent pulse source configurations....

    • The system performs dynamic high temperature and humidity reverse bias burn-in test for SiC MOSFET with reference to AQG324 for the test method. Up to 6 stations can be tested in each test area, with independent pulse source configurations. A standard 85°C/85%RH test environment is available for the device. It has the function of short-circuit disengagement test of test device, which can automatically detach the faulty device from the burn-in test circuit without affecting the normal test of other devices.
    nA-level leakage current detection accuracy
    dv/dt＞30v/ns (Coss＜300pF)
    The whole machine is refreshed in 30s for full-station data
    Unique high-voltage suppression circuit, the instantaneous breakdown of the device does not affect the burn-in process of other stations
    The independent control function of the burn-in voltage of the station can be customized to realize the over-limit rejection of the
    burn-in of a single station
    Full experimenter human safety considerations are set
  • Wafer-level reliability test system
    The system is suitable for electrical reliability test for controllable high-temperature for 6/8-inch wafer-level devices based on JEDEC reliability test standard....

    • The system is suitable for electrical reliability test for controllable high-temperature for 6/8-inch wafer-level devices based on JEDEC reliability test standard; It provides high-precision and high-voltage output, and saves records high-precision current, controllable temperature and other parameters, and according to the recorded test data, export experiment tables and MAP diagrams in multiple formats.
    Customized high-temperature adjustment semi-automatic probe station, supporting ≤5 wafers simultaneous burn-in test
    Support the independent protection function of each wafer die, and control the over-current and over-voltage beyond the limit
    Support nitrogen protection to prevent wafer oxidation, and support overvoltage protection when filling
    Support to change the Burn-in Board or probe card to different package devices for test
    Support wafer mounting contact spot detection, real-time temperature and pressure detection
    Support HTGB, HTRB and other burn-in test functions, Vth/IDS/IGS and other parameters of automatic testing and data analysis
    Support built-in wafer layout MAP configuration, real-time display of data and query of historical data
    Support access to the centralized control station (smart core protection cloud) system, customized docking with the MES system

Categories

208 Equipment, Test
  • Burn-In Accessory Systems
  • Burn-In Systems
    • 309 Materials, Test
  • Burn-In Boards; Performance Boards (incl. Low; High Temp and Ceramic)
  • Test Sockets; Contactors and Contact accessories
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