HIGH PRECISION:Placement Accuracy: ±1.5μm@3σ;Precise Bond Line Thickness Control;Compatible for Both TC-MUF and MR-MUF Processes, min.Pitch≥20μm.
HIGH SPEED:Single TCB, BH 2x, UPH≥1500; Dual TCBs, BH 4x, UPH≥3000;Heating Rate ≥ 200℃/s, Cooling Rate ≥ 70℃/s;EFEM with Multi-loadports, Supports Various Wafer Loading/Unloading.
FLUXLESS:Low Temperature Atmospheric Plasma to Remove Metal Oxide;Wafer-level /Chip-level Plasma Treatment (Both Sides);N2 Shielding (O2 < 50ppm), Precise Chamber Temperature Control;No Flux Cleaning, Suitable for Fine Pitch Flip Chip Bonding.
HIGH FLEXIBILITY:Compatible for Both Flux Dipping and Fluxless Modes;Compatible for CoW/CoS;Compatible for Wafer/Tape & Reel/Tray Loading;Single TCB/Dual TCBs/TCB-Vacuum Formic Acid Reflow System.