Beijing SEMICORE ZKX Electronics Equipment Co.,Ltd.

The medium current solutions can be used for process with medium and low dose doping inaccurate angle and dose control,like threshold voltage adjustment doping,channel doping,halo doping and pocket doping etc.They are suitable for high volume production with self-optimizing and self-adaption.

Main Characteristics：Three-bending-magnets beam line system,high purity beam；Wide range of energy and dose.Short tuning time.High production；The symmetric scan method in horizontal enhance the beam uniformity；The LE Lens and PFG can enhance the low energy beam transport；Auto-align extraction system,spot beam transport.

Energy：2-900 keV

Uniformity：1σ≤ 0.5%

Wafer Size:12 inch,8 inch

Repeatability：1σ≤ 0.5%

Energy Accuracy：±1%

Dose Range：2E11 - 1E16 ions/cm²

Angle Accuracy：0-45°

Mechanical Transmission Efficiency：500 pieces /h

Angle Accuracy：±0.1°

Fragmentation：1：100000

Source Lifetime: Gas Source≥700h Solid Source≥50h

12 inch Max Beam Current    B+：2500μA     As+：1300 μA   P+：2500μA

8 inch Max Beam Current  B+： 2000μA  As+ 1300 μA   P+ 2000μA

Applications：LOGIC,DRAM,3D NAND,NOR,CMOS,MOSFET,IGBT,BCD,CIS,MEMS...

The high current solutions have a large energy range and perform well in low energy region.They can meet the demand of advanced process in energy,particle and metal pollution.With efficient wafer transmission and scanning system,high WPH is guaranteed.

Main Characteristics：Wide range of energy,well performance in low energy region；Very low energy contamination；Efficient transmission and scanning system,high WPH；Full coverage of process.

Main Technical Indicators：

Energy：200eV-60/80 KeV       

Hot：500℃

Wafer Size:12 inch ,8 inch         

Max Beam Current：B+：16mA，As+：25mA,P+:25mA

Ion Species：B,P,As,F,C,Si,Ge,N,Ar,H,He                     

Energy Pollution：＜0.05%

Dose Range：2E13 - 1E17 ions/cm²

Max Current： B+:15mA    As+:20mA     P+:20mA

Applications：LOGIC,DRAM,3D NAND,NOR,CMOS,MOSFET,IGBT,BCD,CIS,MEMS...

The Medium Energy & High Current Implanter is based on the High Current platform and have a higher energy range.With the ability to run with B/P/As/n/H/He/O,it can be used in various process such as power device,SOl and so on.

Main Characteristics：High current with higher energy；Single Wafer；Ability to run with more kinds of ions；Perfect shield for better metal and particle performance.

Main Technical Indicators：

Energy：5-200 keV

Wafer Size:12 inch，8 inch

Ion Species： B,P,As,F,Ar

Dose Range：1E14 - 3E17 ions/cm²

Uniformity Energy＞10keV:1σ＜1.0%；Energy＜10keV:1σ＜1.5%

Repeatability：Energy＞10keV:1σ＜0.7%；Energy＜10keV:1σ＜1.0%

Max Current：B+:15mA,As+:20mA,P+:20mA

Applications：Power Device, SOI(SMARTCUT,SIMOX),Logic,DRAM,3D NAND,IGBT,BCD,CIS

The high energy solutions are used for the implantation of logic,storage device,image device and power device.They can cover a wide range of process with accurate impant parameters,well uniformity and repeatability.

Main Characteristics：The ion source has Well performance and long lifetime；High beam energy.E>1 Me V for single charge；Single wafer implantation；Wide range of dose.High energy purity；High transmission efficiency.High beam current.

Main Technical Indicators：

Energy：40 keV-8 MeV

Beam Current：B+：1MeV，≥1000μA

Dose Range：1E11 - 5E15 ions/cm²

Uniformity and Repeatability： Dose：1E11 - 5E11 ions/cm²，1σ≤ 1%

Dose：5E11 - 5E15 ions/cm²，1σ≤ 0.5%

Applications：LOGIC,DRAM,3D NAND,NOR,CMOS,MOSFET,IGBT,BCD,CIS,MEMS...

Used in SiC power electronic device manufacturing, Si-based device manufacturing. By selectively injecting impurity elements such as Al,B, N, P, etc. into wafers to form p-n junctions or to modulate device performance parameters.

Main Characteristics：

1.Low Energy Lenses and Low Energy Showers. Enhanced low-energy beam transfer

2.Ion source ring hole lead-in. Automatic centering of the lead-in system and speckle beam transmission

3.Adapted to Solid State Source Ion Sources. Al Ion Implantation Process for SiC Power Devices

4.The optical path is constructed with a tri-magnet structure. Used to increase the purity of the ion beam

5.Bilateral symmetric scanning mode. For improved beam uniformity

6.Large energy range, wide dosage range, short automatic beam introduction time. High production efficiency

7.Can be equipped with high temperature target disk. For off-temperature injection or room temperature injection, the highest heating temperature ≥ 500 ℃.

Main application: Focus on the manufacture of SiC power electronics devices and Si-based devices. By selectively injncting doped elements such as Al, B, N, P, p-n juncilons can be  formde and device performance can be adjusted.

Main Characteristics：

Wide range of energy, well performance in low energy region.

Efficient transmission and scanning system, high WPH.

Very low energy contamination.

Full coverage of process.

Energy：200eV-60/80KeV

Hot：500℃

Wafer Size： 6inch,8 inch   

Energy ： < 3KeV: 1σ<1 %

Repeatability ：  Energy：>10 KeV: 1σ< 0.7 %

Energy ＜10 KeV: 1σ< 1.0%

lon Species ：B   Al   N   P

Contamination：<0.05%

Dose Range ：2E13-1E17 ions/cm²

Applications：Manufacture of the third generation of semiconductor devices(compatible with Si-based devices)