Integrated Service Technology

Hsinchu, 
Taiwan
  • Booth: K2789
  • - 1st Floor


Welcome iST for verification & tests of electronic industry



A R&D partner for speed-up the time to market



iST, a laboratory for verification and tests of electronic industry. Founded in 1994 by raising funds of NTD$ 10 million in the initial stage of Asia’s semiconductor industry, and began its business from IC circuit edit (FIB), which had changed the existing verification model in the entire semiconductor industry.

Aimed to solve customer’s pain point by assisting IC debugging, analysis and quality assurance. iST plays a R&D partner for customers to speed-up the time to market.





iST gradually expanded its scope of operations, including Failure Analysis(FA)Reliability Assurance (RA)Material Analysis (MA)Chemical/ Prpcess Micropollution analysisSignal Integrity Testing and so on. iST has offered full-scope verification and analysis services to the IC engineering industry, its customers cover the whole spectrum of the electronics industry from IC design to end products. In response to rising Cloud Intelligence, Internet of Things (IoT) and Internet of Vehicles (IoV), iST not only focuses on its core services but is also expanding its service offerings based on international trends, such as Semiconductor Advanced Process Verification PlatformsAutomotive Electronic Verification Platforms and IoT/ IoV Platforms.



An impartial lab to assist customers in quality control



iST is the biggest lab among Asia and the world’s most integrated lab in semiconductor industry, which has been accredited by multiple international well-known and credible organizations including IEC/IECQ, TAF, TUV NORD, and CNAS. With increased outsourcing by major international brands, iST also plays the role of independent quality testing laboratory for OBM outsourcing products and association and is certified by TI, Lenovo, Dell, Cisco, Delphi, Continental Automotive, ISTA, HDMI, etc.





Global Vision



Headquartered in Taiwan, iST has led it to expand its operations around the world, including Kunshan, Shanghai, Beijing, Shenzhen, Chengdu, Xiamen, Xian, Hefei and Tianjin in China; Japan; US. These are all dedicated to providing customers with prompt, reliable and high-quality technical services in order to grow with the leaders of the world.

Office Locations






 Products

  • TEM(Transmission Electron Microscopy)
    TEM is capable of analysis of fine structures, crystalline defects, and chemical compositions of materials...

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    TEM (Transmission Electron Microscopy) is an analysis device for observation the micro structure of material and lattice defects. By imaging ultra-thin sample with high-energy electron beams, its resolution is down to 0.1nm (the scale of atom).
     
    What iST can do for you
         
    TEM is capable of analysis of fine structures, crystalline defects, and chemical compositions of materials, which is also equipped with EDS, HAADF (ZC), and stress analysis, which can acquire structural and compositional information on atomic scales to address various process issues for the clients.
    • Micro Structure Analysis (Lattice Image).
    • Crystalline Defect Analysis.
    • Element Ingredient Analysis.
    • Thin Film Stress Analysis.
    • Electron Diffraction Analysis.
    • Impurity And Pollutant Analysis.
     
    The Superiority of iST
     
    1 Market-leading TEM analysis technique has hit the 5nm technology node.
    2 Fast delivery: operating 24 hours a day by 3 shifts.
    3 The cutting-edge TEM equipment of FEI, JEOL for your selection.
    4 The power of TEM sample preparations: iST installs total 8 FEI Helios 660 Dual-beam FIB, which is the most advanced model in industry and dedicated to working with the new ion polishing tool that can effectively eliminate sample damage (with energy of ion beam as low as 500eV), which can produce TEM images of the highest quality.
     
    iST Case Sharing
     
    High resolution TEM image analysis LED Epitaxy structure analysis
     
    High resolution atom image Advanced process FINFET image
    LED QW and N spacer epitaxy structure EDS elemental analysis of LED QW structure
       
    3D V-NAND Flash Analysis
    Stress Analysis

     

     

     

     
    3D V-NAND Flash structure analysis 3D V-NAND Flash EDS line scan analysis Horizontal direction Vertical   direction
     

    High resolution TEM &EDS image analysis

    28nm HKMG transistor TEM image 28nm HKMG transistor EDS mapping 28 nm HKMG Transistor EDS line-scan
  • SIMS(Secondary Ion Mass Spectrometer)
    iST SIMS may be employed in P/N junction depth analysis and concentration analysis over trace elements in bulk material....

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    Secondary Ion Mass Spectrometer (SIMS ), this mechanism executes quantitative analysis over micro contamination, doping, and ion implantation as well as junction diffusion behavior study with high resolution detection capacity based on the high sensitivity of ions. This makes it ideal for trace detection and analysis over semiconductor, LED and thin film material detection and analysis.

    Best tool-SIMS for calculating P/N dopant concentration

    What iST can do for you
         
    In addition to doping concentration analysis the high mass resolving capacity of iST SIMS may be employed in P/N junction depth analysis and concentration analysis over trace elements in bulk material. To control the semiconductor/LED process parameter and maintain component / epitaxial stability.
     
    • Detection limit: up to ppma(1E-6) or even ppba (1E-9)
    • Capable of detecting all elements in the periodic table (H~U)
    • Capable of distinguishing between isotopes
    • Depth resolution: up to 2nm
    • Capable of analyzing samples of poor conductivity
    • Capable of quantitative analysis by comparing against standard unit
     
    The Superiority of iST
     
    1 High mass resolving power (M/ΔM):>20,000
    2 High depth resolution: less than 2nm/decade
    3 Ultra-high vacuum: less than 1E-9mbar (Ion on)
    4 Excellent detection limit: up to 1.0E13atom/cm3(ppba) or less (As doping in Si substrate)
     
    iST Case Sharing
     
    Detection limit ppba level analysis
    Analysis sample: semiconductor silicon wafer  

    See the chart below for the highest limit of iST SIMS device in terms of implanting concentration of arsenic (As) ions in semiconductor silicon wafer is analyzed. It tells the detection limit of SIMS may reach up to 0.2 ppba.

    Depth profiling of As ions (N type) implanted in Si chips

     
    High resolving SIMS analysis
    Analysis sample: semiconductor silicon wafer

    Find out SIMS depth resolution with multi-layers of nano-thick boron (B) implant analysis. The minimum depth resolution of depth profile analysis featured by iST SIMS device based on this special high-resolution analysis technology is 1.65nm.

    Depth profiling of B ions (P type) implanted in Si chips

     

    LED epitaxial concentration analysis

    Analysis sample: LED epitaxial

    LEDs samples usually need to observe 7 or 8 trace elements during SIMS analysis. Figures below tell concentration profile of Mg (P type) and Si (N type) in epitaxial; combining with the TEM analysis and relative position of elements in epitaxial can be identified.

    Upper figure: identify concentration distribution through SIMS analysis
    Lower figure: identify relative position of elements through TEM analysis

  • XRD(X-ray diffraction)
    The XRD deployed by iST comes with XRR (thin film X-ray reflectivity) functions....

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    X-ray diffraction analysis (XRD), is designed to identify material crystal structure, crystal orientation, and grains size of nanometer crystal, as well as residual stress analysis of mono- and poly-crystalline film material by pairing the X-ray diffraction pattern of crystal against databases in a non-destructive manner.

    How to analyze crystal structure and film characteristics without damaging the samples?
     
    What iST can do for you
         
    The XRD deployed by iST comes with XRR (thin film X-ray reflectivity) functions. The XRD tool is based on the diffraction principle and the XRR is the reflection pattern of XRD aimed at measuring film thickness (up to 0.1nm thick), roughness of the sample surface and layers interface, electronic density of film, and even perform multi-layer film analysis for a total thickness below 500nm. This makes it ideal for analyzing film material characteristics non-destructively.
    • Crystal structure analysis (lattice)
    • Crystallinity analysis
    • Texture analysis
    • Thin film residual stress analysis
    • RSM (Reciprocal Space Mapping) analysis
    • XRR analysis
     
    The Superiority of iST
     
    1 Market leader for the smallest XRD spot resolution: 0.3mm
    2 High power and high strength X-ray source: 6kW
    3 Fixed-point pattern analysis: laser spot positioning
    4 Sample analysis dimension: available for 12″ wafer with 8″ movement scope
     
    iST Case Sharing
     
    Material characteristics of XRD analysis
     

    The analysis application of material lattice structure characteristics

     
    XRR analysis over bilayer nanometer film Al2O3
    Sample for analysis: Al2O3/Si

    See figure below for results of fitting the XRR pattern of aluminum oxide films on silicon substrate. The table below suggests there are two layers of aluminum oxide films at different densities (the thickness is 0.94 nm and 6.69 nm for upper and lower layer respectively); roughness of aluminum oxide surface and the silicon substrate interface is 0.49 nm and 0.23 nm odd respectively.

     

    LED epitaxy HR XRD analysis

    Sample for analysis: InxGa1-xN/GaN superlattice

     

    See below for a high resolution XRD pattern for the epitaxy of LED wafer. Fitting of superlattice InxGa1-xN/GaN suggests thickness and composition at 2.4nm/14.35nm and x=16.27%.

  • XPS/ESCA
    XPS is capable of obtaining information of surface element distribution and chemical bonds, and the analysis is not affected by conductivity of the sample. ...

  • XPS is based on the principle of the photoelectric effect. Electrons within the inner layer of atoms are excited into photoelectrons once an X-ray penetrates a sample. Photoelectrons close to the material surface will escape the surface and get detected by the instrument which can be used to identify the composition of surface elements and determine their chemical bonds.
     
    What iST can do for you?
         
    XPS is capable of obtaining information of surface element distribution and chemical bonds, and the analysis is not affected by conductivity of the sample.
     
    • Surface Survey: Ingredient Analysis Of Material Within 100A On Surface Of Sample.
    • Narrow Scan: Chemical Bonding Configuration Analysis Within 100A On Surface Of Sample.
    • Oxidation Analysis Of Sample (Oxidation Depth And Oxidation State)

    • Depth Profile Analysis: Via Ar Ion Sputtering Of Sample Surface, Acquire Signals Of Elements At Different Depths In The Vertical Profile.
    • Spectrum Mapping: Analyze Specimen Zonal Element Signals For Acquiring Zonal Elements Distribution Image.
    • Line Scanning: Analyze Linear Element Signals Of Specimen For Acquiring Linear Element Distribution Map.
     
    The Superiority of iST
     

    The highest resolution XPS – Quantera II Scanning X-ray Photoelectron Spectroscopy acquired by iST is capable of micro area analysis as fine as 7.5um, compared to the 50um capability of conventional XPS, offering more refined structure analysis of sample surface that can satisfy industry needs.

     
    iST Case Sharing
       
    Surface Survey Narrow Scan
    Pt Catalyst on Graphite Analysis Narrow scan EDS of Pt 4f  

     

    Depth Profile

    SXI (Scanning X-ray Induced secondary electron image)
    Depth Profiling of hard drive disc Gold finger on IC substrate analyzed by SXI
    (Beam size : 7.5um)
  • AFM(Atomic Force Microscopy)
    AFM gives atom-scale resolution, forming a key means for studying surface of micro structures....

  • The main principle of AFM is to cause a micro displacement of the cantilever (which carries the probe) using the atomic forces between the probe tip and the sample, to map the topography of the sample. AFM is applicable to various material surface inspections.

    Do You Really Have to Break A Wafer to Measure Its Surface Roughness

    What can iST do for you
         
    AFM gives atom-scale resolution, forming a key means for studying surface of micro structures.
     
    • Membrane Roughness Tests
    • Structural Study Of Micro Surfaces

    • 2D/3D Material Surface Topography
    • Nanoscale Step Height Analysis
     
    The Superiority of iST
     
    • A 12″ wafer containable AFM machine  within Taiwan and mainland industry. This enables analysis without breaking the wafer and maintains its completeness for later tests.。

    • The extra microscope with additional functions enables a still wider scope of analysis applications, i.e., CAFM (Conductive Atomic Force Microscopy) and SCM (Scanning Capacitance Microscopy)

      AFM CAFM SCM
    Analysis mechanism Measure the surface structure and looks by atomic forces between the probe tip and sample
    The probe applies voltage on its tip or sample to get the current strength at the sample surface
    Get the differential of capacitance signals with a conductive probe, convert them into 2D doping image distribution
    Analysis application 1. Material surface roughness measurement and structure observation 
    2. Material surface 2D/3D pattern image 
    3. Nanoscale depth analysis and dimensioning

     
    1. Detect over resistance or current leakage 
    2. Identify P+/ N+ /Poly contact 
    3. Measure single point I-V curve
     
    P-N type zone and border
    Equipment
    specification
    Sample dimension: (mm) 200 x 200 x 15 
    300 mm x 300 mm (12" wafer) Compatible 
    Analysis scope (um): 90 x 90 x 5

    Magnification ratio: 107~1011 
    Bias voltage range: -10V~10V

    Plane resolution: 20nm 
    Doping concentration range: 1015~1019 atom/cm3 
    Scanning range: 90 * 90um / with height in 2cm
     
    iST Case Sharing
       

    AFM - Roughness Analysis

     

     

     
    Get SAD percentage, Rq and Ra values based on 2D and 3D surface roughness analysis chart  
     

    SCM Analysis - Top View Survey

     
    Surface looks after AFM analysis Determine the P/N well location by SCM
     
     

    SCM Analysis - Cross Section Survey

     
    Determine the N Well / P Well /N Epi layer location by SCM
       

    CAFM Analysis - AFM Surface and Contact Analysis

     
    Contact VC with positive voltage (+1v) applied (no hot spot occurs) Contact VC with negative voltage (-1v) applied (hot spot occurs)
  • AES(Auger Electron Spectroscopy)
    AES features nano-grade single spot and ultra-surface (<10nm) analysis capacity combining with built-in Ion gun etching (Ar) to identify distribution ratio of elements at layers of different depths....

  • Auger Electron Spectroscopy (AES) is a highly sensitive surface analysis technique which employs an electron-beam-based excitation source and features a detection depth down to 10nm.
     
    What iST can do for you
         
    AES features nano-grade single spot and ultra-surface (<10nm) analysis capacity combining with built-in Ion gun etching (Ar) to identify distribution ratio of elements at layers of different depths.
     
    • Auger Depth Profile (Etch Sample Surface With Ar+(3kV 1uA) For Depth Profiling).
    • Auger Mapping (Element Distribution Mapping Within A Specified Area).
    • Survey Of The Sample Surface.
     
     
    iST Case Sharing
       

    Surface Survey

     

    Specific small area analysis on Au pad  
     
     
     

    Depth Profile

     
    Element At% distribution analysis
       
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