Park Systems Corp.

Suwon,  Korea 
Korea (South)
  • Booth: J2738
  • - 1st Floor


Park Systems
Leading innovation in AFM



Park Systems!





Playing a critical role in the development of AFM technology, Park Systems has remained the leading innovator in nanoscale microscopy and metrology throughout its long history and continues to invest in the development of new emerging technologies. With headquarters in Korea, the US, Japan, and Singapore, we create some of the world's most accurate and most effective AFMs for research and industry. Our team is constantly striving to continue meeting the needs of scientists and engineers worldwide. As the global microscopy market grows rapidly, we will continue to innovate and develop new systems and features that make our products the most effective and most efficient nanoscale microscopy there is.



Products from Park Systems are used by some of the most notable researchers and corporations across the globe. We strive to meet the needs of our clients by constantly working to create the most accurate, easy to use nanoscale microscopy technology available.



Our comprehensive line of AFMs offers users unparalleled accuracy and ease of use. With AFMs designed specifically to be used in materials science, electronics, life science, nanotechnology, and other areas of research and industry, our tools are trusted to deliver ultra-high resolution with extremely precise measurements quickly and easily.





Park Systems成立於1997年,是壹家專門從事納米設備測量的公司,Park公司在AFM技術發展中發揮著舉足輕重的作用,Park Systems始終是納米顯微鏡和計量學領域的創新者,致力於新技術開發,制造和銷售具有全自動化軟件且使用方便的高精度原子力顯微鏡(AFM)。我們總部位於韓國,並在美國,日本和新加坡都設有辦事處,我們的團隊不斷努力去滿足全球科學家和工程師的需求。隨著全球顯微鏡市場的快速增長,我們將繼續創新和開發新系統和功新能,為我們的產品成為最有效的高精度納米顯微鏡而努力。



Park Systems的產品用戶遍布全球,目前作為增長最快的AFM公司,我們已經擁有世界壹流的技術,並將通過開發核心技術和最優質產品來引領納米技術的發展。Park的AFM系列為用戶提供無與倫比的準確性和易用性。通過專門設計用於材料科學,電子學,生命科學,納米技術以及其他研究和工業領域的原子力顯微鏡,我們的產品能夠快速輕松地提供超高分辨率和極其精確的測量,從而得到廣大用戶的信賴。











 Press Releases

  • Electromechanical couplingin materials is a key property that provides functionality to a variety of applications,including sensors, actuators, IR detectors, energy harvesting and biology. Most materials exhibit electromechanical coupling in nanometer-sized domains. Therefore, to understand the relationships between structure and function of these materials, characterization at nanoscale is required. This electromechanical coupling property can be directly measured in a non-destructive manner using piezoelectric force microscopy (PFM), a mode that comes standard in all Park atomic force microscopes (AFMs). Here in this application note, we developed a novel technique termed as PinPoint™ PFM and demonstrated the application of PinPoint PFM in the characterization of annealed phenanthrenethin film on top of an ITO surface. The phenanthrenematerial has been a challenging sample to get quality topographical and piezoelectric response data from using conventional SPM methods. The main difficulty is due to the rod-shaped nanostructures on the sample surface being very susceptible to displacement by a scanning probe's tip. The invention of Park's latest PinPoint PFM technique gives researchers both a friction-less imaging technology that overcomes this difficulty and the means to achieve publication-ready image quality in much less time than previously possible with older methods. Here we demonstrated, not only can image well-resolved individual rod-shaped phenanthrene structures, but also differences in electrical polarization expressed as differences in PFM contrast (brighter areas showing a positive polarization and darker areas a negative polarization) without image distortions.

    https://www.parksystems.com/index.php/cn/medias/nano-academy/articles/946-pinpoint-piezoelectric-force-microscopy

  • Since the inception of scanning tunneling microscopy (STM) [1], electrochemists have sought to take advantage of scanned probe microscopy (SPM) techniques to manipulate the spatial position of a probe with high resolution to facilitate simultaneous high resolution topographical, conductometric, and amperometric/voltammetric imaging of surface and interfaces [2]. Lately, scanning ion conductance microscopy (SICM) [3], has emerged as a versatile non-contact imaging tool and been employed for a variety of applications. SICM has been used to investigate the surface topography of both synthetic and biological membranes [4, 5], ion transport through porous materials, dynamic properties of living cells [6, 7, 8], and suspended artificial black lipid membranes [9]. In addition, integration of complementary techniques with SICM has led to many exciting new applications, including scanning near-field optical microscopy (SNOM) [10] and patch-clamping [11, 12]. Powerful as it is, SICM remains insensitive to electrochemical properties, or, in other words, SICM is inherently chemically-blind and has no chemical specificity. To obtain spatially-resolved electrochemical information, scanning electrochemical microscopy (SECM), also known as the chemical microscope, has been developed. SECM has been widely employed to examine localized electrochemical properties and reactivity of various materials/interfaces, such as electrode surfaces and interfaces [13, 14, 15], membranes [16, 17, 18], and biological systems [19, 20, 21, 22, 23]. Despite its many applications, SECM, however, lacks reliable probe-sample distance control, and the probe is usually kept at a constant height during conventional SECM scanning. As a result, any variation in surface topography will result in changes in probe-sample distance, and thus leading to convolution to the measured faradaic current, which will complicate the subsequent data interpretation [18].
    To address the above-mentioned issues for SICM and SECM, hybrid SICM-SECM techniques have been developed, in which the SICM compartment provides the accurate probe-sample distance control, while the SECM compartment measures the faradaic current for electrochemical information collection. Here in this application note, first, the principle of operation for SICM, SECM and SICM-SECM will be briefly discussed. Next, the probe as well as the sample that are used for SICM-SECM imaging experiments are described. Finally, simultaneous SICM-SECM topography imaging and electrochemical mapping with SmartScan RTM10e using a Park NX10 system is demonstrated.

    https://www.parksystems.com/index.php/cn/medias/nano-academy/articles/849-simultaneous-topographical-and-electrochemical-mapping-using-scanning-ion-conductance-microscopy-scanning-electrochemical-microscopy-sicm-secm-2

  • (20180821)

 Products

  • NX-Wafer
    NX-Wafer is the only wafer fabrication AFM with automatic defect review. This gives it the power to increase the throughput of your lab by up to 1000% while ensuring a high level of accuracy and quality control when scanning wafers up to 300 mm in size....

  • The only wafer fab AFM with automatic defect review

    Fully automated AFM solution for defect imaging and analysis that improves defect review productivity by up to 1,000%

    Park's Smart ADR provides fully automated defect review and identification, enabling a critical inline process to classify defect types and source their origin through high resolution 3D imaging.

    Designed specifically for the semiconductor industry, Smart ADR is the most advanced defect review solution available, featuring automatic target positioning without the need for labor intensive reference marks that often damage the sample. The Smart ADR process improves productivity by up to 1,000% compared to traditional defect review methods. Additionally, the new ADR capability offers up to 20x longer tip life thanks to Park's groundbreaking True Non-Contact™ Mode AFM technology.

    Low noise Atomic Force Profiler for accurate, high throughput CMP profile measurements

    The industry leading low noise Park AFM is combined with a long range sliding stage to become an Atomic Force Profiler (AFP) for chemical mechanical polishing (CMP) metrology. The new low noise AFP provides very flat profiling for both local and global uniformity measurements with the best profiling accuracy and repeatability on the market. Unique True Non-Contact™ mode enables nondestructive in-line measurements with much longer tip life, while Park's innovative True Sample Topography™ obtains CMP profiles without the usual artifacts associated with a traditional piezotube-based AFP. This guarantees accurate height measurements with no non-linear or high noise background subtraction over a wide range of profiling lengths.

    Sub-Angstrom surface roughness measured with extreme accuracy and minimized tip-to-tip variation

    The surface roughness of a wafer is critical in determining the performance of a semiconductor device. For the state-of-the-art device manufacturer, both chip makers and wafer suppliers are demanding more accurate roughness control of ultra-flat surface on Si or SOI wafers. By delivering the industry’s lowest noise floor of less than 0.5 Å and combining it with True Non-Contact™ mode, Park NX-Wafer can reliably acquire sub-Angstrom roughness measurements with minimum tip-to-tip variation. Park's Crosstalk Elimination also allows very flat orthogonal XY scanning with no background curvature, even on the flattest of surfaces regardless of scan location, rate, and size. This enables very accurate and repeatable surface measurement from micro-roughness to long-range waviness.

  • NX10
    NX10 produces data you can trust, replicate, and publish at the highest nano resolution. From sample setting to full scan imaging, measurement, and analysis, NX10 saves you time. With more time and better data, you can focus on more innovative research....

  • Innovative features for innovative work

    Accurate XY Scan by Crosstalk Elimination

    • Two independent, closed-loop XY and Z flexure scanners for sample and probe tip
    • Flat and orthogonal XY scan with low residual bow
    • Out-of-plane motion of less than 1 nm over an entire scan range
    • Z scanner linearity deviation of less than 0.015% over an entire scan range
    • Accurate height measurements without any need for software processing

    Accurate AFM Topography with Low Noise Z Detector

    • Sample topography measured by industry leading low noise Z detector
    • True Sample Topography™ without edge overshoot or piezo creep error
    • Accurate surface height recording, even during high-speed scanning
    • Reduced XY scanner ringing by forward sine-scan algorithm
    • Industry leading forward and backward scan gap of less than 0.15%

    Best Tip Life, Resolution and Sample Preservation by True Non-Contact™ Mode

    • Industry leading Z-scanner bandwidth of more than 9 kHz
    • Fastest Z-servo speed of more than 62 mm/sec tip velocity
    • Minimum tip wear for prolonged high-quality and high-resolution imaging
    • Minimized sample damage or modification
    • Immune from parameter-dependent results common in tapping imaging

    User Experience-Driven Software and Hardware Features

    • Open side access for easy sample or tip exchange
    • Easy, intuitive laser alignment with pre-aligned tip mount
    • Easy head removal by dovetail-lock mount
    • Direct on-axis optics for high resolution optical viewing
    • Fast automatic tip approach to sample surface within 10 seconds
    • Park SmartScanTM - AFM operating software versatile enough to empower both novices and power users alike toward great nanoscale research.

            - Auto mode: Automated image acquisition in three easy steps to determine probe setup, scan position, and scan area.

            - Manual mode: Opens various up scan parameters and macro/scripting support to advanced users for fine-tuned scan control.

    The Most Comprehensive and Extensible AFM Solution

    • The most extensive range of SPM modes
    • The largest number of sample measurement options
    • The best option compatibility and upgradeability in the industry
    • 24 bit digital electronics with three internal lock-ins, Q-control, and spring constant calibration
    • Active temperature control of acoustic enclosure
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