EpiGaN nv

  • Booth: J2554
  • - 1st Floor

About EpiGaN

Founded in 2010 EpiGaN provides innovative GaN technology solutions to its global customer base. From its European headquarters and modern production site in Hasselt/Belgium the company offers early access to leading-edge GaN/Si and GaN/SiC epiwafer technology for next-generation power switching, RF power, and advanced sensor solutions. EpiGaN’s GaN technology is a key enabler for device innovation in consumer power supplies, electric vehicles, wireless charging and RF power systems for next-generation cellular infrastructures – 5G, IoT (Internet of Things), and smart sensor systems. The product spectrum ranges from application-specific standard epi-wafers of up to 200mm diameter to customized products utilizing the company’s differentiating technology of AlN barrier and in-situ SiN capping layers. These unique structures developed by EpiGaN excel by their superior surface passivation and device reliability, enabling system operation in higher frequency bands and providing added value to customers and their products.


  • GaN/Si and GaN/SiC epitaxial wafer solutions
    - SiN or GaN capped (Al,Ga)N/GaN and InAlGaN based heterostructures on Si and SiC substrates ...

  • The promise of GaN on Silicon

    The growing demand for high-speed, high-temperature and high-power handling capabilities has made the semiconductor industry rethink the choice of materials. Today’s Silicon semiconductor technologies are approaching their theoretical limits and only incremental performance improvements are still possible. Due to the unique characteristics of Gallium Nitride (GaN) (extremely high current density, breakdown voltage and switching frequency, as well as low noise figure and high linearity), devices can provide a step change in performance for power switching, RF power and sensor systems. At the same time GaN on Si epitaxial wafers enable device manufacturing on automated Si CMOS fabrication lines and leverage Si based economies of scale for lowest production costs.

    EpiGaN's unique in-situ SiN passivation

    To control the extreme sensitivity of GaN transistors to surface charges, EpiGaN deposits a unique in-situ SiN capping layer, which is grown by MOCVD as part of the epitaxy process on top of the HEMT (high electron mobility tansistor) epiwafers. The interface between this capping layer and the top nitride surface is incredibly smooth and it provides excellent passivation of surface states. In addition, the SiN layer enables the growth of pure AlN barriers with the resulting heterostructures having even lower sheet resistance values. As a consequence engineers can realize more compact and lower cost power switching HEMT designs enabled by EpiGaN's unique SiN/AlN/GaN heterostructures. Moreover, RF power transistors will benefit from high transconductances even at relatively moderate gate lengths.

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