Wonik IPS Co., Ltd.

Pyeong taek-city,  Gyeonggi-do 
Korea (South)
  • Booth: N588
  • - 4th Floor


Global Leader, WONIK IPS

WONIK IPS was established in 1991. WONIK IPS successfully developed PE-CVD in 2002 and Metal ALD/CVD in 2005, which were recorded the first mass production equipment in Korea. Since then we have been developed continuously for providing new process technology to customers, and launched high performance tools such as GEMINI ALD/CVD, NOA , QUANTA for 3D NAND, MAHA TSV, etc. We became a great company to lead the semiconductor equipment industry in the world. WONIK IPS provides a good solution for advanced semiconductor devices with proven R&D and field experience over the decades.

 


 Products

  • GEMINI ALD
    Product for: ALD-Oxide...

  • GEMINI ALD-Oxide is widely used for patterning spacers, providing solution for DRAM and Logic devices. It is also used for Self-aligned Double Patterning films (SADP) and Self-aligned Quadruple Pattern films (SAQP). With its small foot print it outperforms many of its competitor models with high UPEH and extreme uniformity control. It also provides various knobs for map profile control and easy process temperature changes that does not require any hardware modifications.
  • NOA
    Product for: CVD-Ti/TiN, CVD-TiN, ALD-TiN, ALD-W...

  • NOA has its one and only unique feature that can merge different process into a hybrid configuration. Manufacturers can now integrate different process like Ti/TiN, Tungsten, and Clean steps into one single system This allows less FAB costs and space savings for manufacturers. Since technologies move to smaller technology nodes, it can be very difficult to completely fill narrow contacts, vias, plugs and word lines. The NOA can provide solution for ALD-tungsten process which provides excellent gap-fill ability with very low fluorine content and low resistivity compared to pre-existing tungsten processes.
  • GEMINI CVD
    Product for: TEOS, SiON, PEOX,. a-Si...

  • GEMINI CVD dielectric films are well-known for its extremely outstanding uniformity, high-throughput with ultra-low particle level. As device scales down, uniformity is important as it can affect wafer CD variation which leads to poor device fabrication. With our excellent uniformity performance, our product shows almost ALD-like performance, far out performing the competitors’ in the market. Also, GEMINI a-Si films are widely used in DPT/QPT hard-mask patterning solution for advanced DRAM and Logic devices beyond 20nm.
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