Wonik IPS Co., Ltd.

Pyeong taek-city,  Gyeonggi-do 
Korea (South)
  • Booth: N0688
  • - 4th Floor

Global Leader, WONIK IPS

WONIK IPS was established in 1991. WONIK IPS successfully developed PE-CVD in 2002 and Metal ALD/CVD in 2005, which were recorded the first mass production equipment in Korea. Since then we have been developed continuously for providing new process technology to customers, and launched high performance tools such as GEMINI ALD/CVD, NOA , QUANTA for 3D NAND, MAHA TSV, etc. We became a great company to lead the semiconductor equipment industry in the world. WONIK IPS provides a good solution for advanced semiconductor devices with proven R&D and field experience over the decades.


  • System that fabricates an integrated circuit.
    Wonik IPS develops a system that fabricates an integrated circuit on the substrate and provides Deposition system(PECVD/ALD, Metal CVD/ALD), Diffusion system(LPCVD, ALD), Thermal system on semiconductor industry....

  • WIDAS enhances the process capacity per batch, applies more improved key module technologies (heater, robot, and controller), and provides outstanding process capability. It can maximize the formation of uniform thin films and the inhibition of particles and metal impurities through extraordinary temperature control technology and an original and stable chamber structure. Above all, WIDAS’s strength is that it can maximize per batch productivity and greatly reduce equipment investment and maintenance costs.

    GEMINI CVD system produces dielectric films with plasma-enhanced chemical vapor deposition technology such as Anti-Reflective Coating and hardmask. Our PECVD system provides excellent ALD-like superior uniformity performance. In addition, GEMINI a-Si films are widely used in DPT/QPT hard-mask patterning solution for advanced DRAM and Logic devices beyond 20nm.
     As device scales down, uniformity is important as it can affect wafer CD variation which leads to poor device fabrication. Since dielectric films are used to form insulating features in a semiconductor device, it requires films that are exceptionally smooth as it will affect subsequent layers. GEMINI PECVD dielectric films are well-known for its extremely outstanding uniformity. Not only it has a superior productivity, but also it significantly reduces cost of ownership with very high- throughput.

    GEMINI ALD SYSTEM provides solution for multi-patterning applications with high-quality conformal and very uniform films. With its small foot print it outperforms many of its competitor models with high UPEH and extreme uniformity control.It also provides various knobs for map profile control and easy process temperature changes without hardware modifications.
     As device nodes becomes more complex, lithography challenges arise as more steps adds up that brings up some limitations. GEMINI ALD-Oxide provides solution for these limitations with patterning spacers for DRAM and Logic devices. The GEMINI ALD system is used for applications like Self-aligned Double Patterning (SADP) and Self-aligned Quadruple Pattern (SAQP), to provide solution for advanced lithography patterning steps.

    NOA has its one and only unique feature that can integrate different metal processes andstand-alone process. Depending on users, NOA can extend its platform for different needs,which could be integrated different processes like Ti/TiN, Tungsten, and Clean steps intoone single system. This allows less FAB costs and space savings for manufacturers.

     Since technologies move to smaller technology nodes, it can be very difficult to completelyfill narrow contacts, vias, plugs and word lines. The NOA can provide solution for ALD-tungsten process which provides excellent gap-fill ability with very low fluorine content and lowresistivity compared to pre-existing tungsten processes.

    NOA SYSTEM deposits Tungsten film which is used for conductive features like contacts,vias, and plugs on a chip and it is also possible to form TiN(Capacitor Electrode for DRAM)and TiN(Contact barrier metal for DRAM/Logic/3D NAND). As device nodes scale down, conventional CVD Film deposition is limited. NOA system enables integrated metal processes.

    HyEtaTM Spatial ALD System is designed for providing new solutions for conformal films as well as seamless gap-fill based on new ALD technology. It utilizes a additional chemistry in the existing ALD process for conformal film & seamless gap-fill. Since each reaction zone of HyEtaTM system is spatially separated, the reactant is not mixed on processing which enables various chemistries for High-k & SGF process and reduce defect generation. In addition, HyEtaTM spatial ALD is the mini-batch system that is processing six wafers at a time for providing high productivity in small footprint.
     It can be optimized for various applications with different chemistries due to independent shower head with continuous flow and fast dual pumping system. Well-designed susceptor, heater, and lid temperature control system enable wafer processing at wide temperature ranging from 300 to 700℃. It provides fine process control and versatility.