CVD SILICON CARBIDFM Components for Semiconductor Processing Equipment
Recognized as the premier choice for RTP/epi rings and susceptors and plasma etch chamber components, solid CVD SILICON CARBIDE'M Components excel where high temperatures (>1500oq, ultra-high purity (>99.9995%) and chemical resistance are system requirements. The material contains no secondary phases at grain boundaries resulting in components with lower particle generation than other materials. In addition, these components can be cleaned in hot HF/HCI with minor degradation resulting in very low particle generation and longer life.
CVD SILICON CARBIDETM Material attributes:
These attributes lead to performance advantages:
Zhubei City, Hsinchu County
Seoul, 06164 Korea