centrotherm international AG

Blaubeuren, 
Germany
http://www.centrotherm.world
  • Booth: M1044
  • - 4th Floor


Welcome to centrotherm international AG.

centrotherm has been developing and realizing innovative thermal solutions for over 70 years. As a leading and globally operating technology group, we offer production solutions for the semiconductor, microelectronic and photovoltaics industries.

Our equipment is designed for all needs from R&D to mass production and applicable for various semiconductor technologies and applications, such as logic and memory devices (e.g. Flash, DRAM) power semiconductors (e.g. Si, SiC), LED, SMT, MEMS or sensor technology: The product portfolio comprises horizontal and vertical batch furnaces (atmospheric or vacuum processes), vertical high temperature furnaces (annealing < 2050°C, oxidation < 1350°C), single wafer systems < 300mm wafer diameter (RTP, low-temperature microwave oxidation).

Additionally we offer vacuum soldering systems and conveyor furnaces for thermally activated processes, such as thick film processes (drying and sintering) or DCB (remelting and connection), LTCC and MLCC manufacturing (firing).


 Products

  • c.ACTIVATOR 150
    High-temperature furnace for SiC annealing in Ar and H2 ambient...

  • SIC ANNEALING
    The centrotherm c.ACTIVATOR 150 high-temperature furnace has been developed for post implantation annealing of Silicon Carbide (SiC) devices. It is especially designed for high-volume production. The unique design of the centrotherm process tube and heating system allows process temperatures up to 2000 °C.
    CARBON VACANCY ANNEALING
    Carbon vacancies (Vc) can be annihilated by long post annealing just below the temperature at which the Vc generation starts (~1500 °C). This process reduces Vc density and enhances carrier lifetimes.
    HYDROGEN ANNEALING FOR Trench optimization
    For the production of SiC trench MOSFET´s it is important to eliminate excessive E-fields at sharp trench corners. In order to enhance channel mobility, the trench has to be cleaned and smoothed. This can be achieved by high-temperature hydrogen annealing. 
     
    TYPICAL APPLICATIONS
    - SiC annealing
    - H2 annealing for trench optimization
    - GaN annealing
     
    FEATURES & BENEFITS
    - High activation rate
    - Minimum surface roughness (with appropriate C-cap)
    - Maximum temperature 2000 °C
    - Small footprint (1.9 m2)
    - Continuous operation ≤1600 °C
    - All metal-free heaters and insulation
    - Heating ramp up to 100 K/min
    - Batch size up to 50 wafers (150 mm)
    - Automated calibration
    - Side-by-side installation possible
  • c.OXIDATOR 150
    High-temperature furnace for Si and SiC oxidation...

  • The centrotherm c.Oxidator 150 high-temperature oxidation furnace has been developed for the special needs of SiC oxidation but can also be used for silicon oxidation. It is designed for high-volume production. Thanks to the optional centrotherm Hydrox system c.Oxidator 150 also supports wet oxidation. Temperatures up to 1500 °C and all other supported features open up new possibilities to SiC oxidation and the development of an oxide layer with low interface trap density (Dit) and high channel mobility. The outstanding reactor has been designed for high performance, small footprint and low cost of ownership while offering highest process flexibility. The tube and the heating element inside the vacuum reactor chamber are designed to allow a safe use of toxic gases like O2, N2O, NO or WetOx. The oxidation process in NO atmosphere leads to an improved SiO2/SiC interface, hence to higher channel mobility as well as improved stability and longevity of the oxide on SiC.
     
    TYPICAL APPLICATIONS
    - High-temperature Si and SiC oxidation
    - Post oxidation annealing (POA) in NO and N2O
    - Wet oxidation
     
    FEATURES & BENEFITS
    - High oxidation rate for thermal oxides on SiC
    - Process temperatures from 900 to 1500 °C
    - High oxide quality
    - Oxide nitridation with N2O and NO possible
    - Small footprint (2.4 m2)
    - All metal-free heaters and insulation
    - Side-by-side installation possible
    - In-situ DCE chlorine cleaning
    - Automated calibration
  • c.HORICOO 200
    Horizontal batch-type process system for multifold applications...

  • The centrotherm c.HORICOO 200 is a field-proven and ultra-versatile tube furnace system that is available for mass and medium volume production as well as for Research and Development. It provides reliable process capabilities and high process performance for multiple applications, such as atmospheric and low pressure diffusion processes as well as LPCVD and PECVD processes. Therefore, the process tubes can be configured for different processes with associated facilities (atmospheric, vacuum or mixed). All furnaces are equipped with an integrated boat handling that enables the storage of up to 8 process boats as well as an integrated wafer transfer system. Outside influences are minimized by watercooled heating cassettes and a soft-landing system. Ease of maintenance ensures low cost of ownership and a high uptime.
     
    PROCESSES
    - Atmospheric processes
    - LPCVD processes
    - PECVD processes
    - Special processes
     
    FEATURES
    - Up to 5 stacked quartz or SiC process tubes
    - Selectable process tube options available
    - Clean automated boat loading for premium processing of wafers or other substrates
    - Fully automated cassette-to-cassette loading
    - Advanced water cooling system
        - No thermal interference between individual tubes
        - No significant consumption of grey room air
    - Modular component design for ease of installation and start-up in clean room facilities
  • c.HORICOO 300
    Horizontal high-throughput system for 300 mm wafers...

  • The centrotherm c.HORICOO 300 horizontal batch-type system is designed for processing 300 mm wafers in mass production. Based on centrotherm‘s process technology expertise in the semiconductor industry and its reliable horizontal batch-type systems, the c.HORICOO 300 is the high-throughput platform for state-of-the-art 300 mm wafer processing. The heating system comprises 5 dual-zone heating elements that provide the centrotherm well-know temperature uniformity as well as  an optimal and steady process. The centrotherm Hydrox system supports wet oxidation processes with different moisture contents. Temperatures up to 1200 °C allow faster oxidation and shorter drive-in processes. The system is equipped with a modern touch operating HMI and factory-host coupling for MES connection. The latest CESAR II software enables a SEMI-compliant recipe management as well as remote control and maintenance. The modular concept of the c.HORICOO 300 also allows a single 4-stack version for lower throughput requirements.
     
    PROCESSES
    - Wet and dry oxidation (DCE, HCI)
    - Annealing (N2)
     
    FEATURES
    - Cluster with two 4-stack furnaces (option: one 4-stack furnace)
    - Quartz or SiC process tubes
    - Selectable process tube options available
    - Automatic air pressure compensation
    - ISO-2 wafer handling area
    - Fully automated cassette-to-cassette loading
    - Advanced water cooling system
          - No thermal interference between individual tubes
          - No significant consumption of clean room air
    - Modular component design for quick and easy installation and start-up in clean room facilities
    - Side-by-Side installation
  • c.VERTICOO
    Vertical wafer process system for silicon-based semiconductors...

  • The centrotherm c.VERTICOO platform for batch-type wafer processing is ideally suited for many semiconductor device fabrication steps. The special design of process chamber and heating system provides maximum flexibility for all standard atmospheric and low-pressure CVD processes with temperatures up to 1100 °C. The stand-alone system is available as high-throughput version for mass production or mini-batch equipment for R&D and low-volume production. Both models are outstanding for high performance, small footprint, low cost of ownership and ease of maintainance. The high-volume furnace c.VERTICOO 200 combines a single-tube setup with dual boat logistics and fully automated carrier-to-carrier wafer handling ensuring maximum throughput with batch sizes up to 150 wafers. The mini-batch furnace c.VERTICOO Mini meets the demanding requirements of semiconductor device R&D and allows customers to reduce development costs by processing a maximum of 50 wafers per batch.
     
    PROCESSES
    - Atmospheric processes
      Diffusion
      Dry oxidation
      Wet oxidation (centrotherm Hydrox)
      Annealing (H2, N2)
    - LPCVD processes
      Polysilicon (doped, undoped)
      Silicon nitride
      Silicon oxinitride
      TEOS oxide
      High-temperature oxide
     
    FEATURES AND BENEFITS
    - Design features
      Auto alignment
      Dual boat logistics
      Water cooled heating cassette
      Small footprint (3.1 m2)
      Designed for side-by-side installation
      Internal storage for 20 carriers
    - Maintenance features
      Main service access at rear side
      Hinged service monitor for easy access
      Fast and easy tube and liner exchange
      Large service doors
  • c.RAPID 200
    Rapid thermal processing system for compound semiconductors...

  • The stand-alone RTP system c.RAPID 200 has been especially developed for multiple process requirements in R&D and production lines. High performance and flexibility combined with low cost of ownership make it the best choice in rapid thermal processing. The capability to run a substrate on a susceptor or within a box in combination with atmospheric or vacuum operation enables a wide range of possible applications for compound semiconductors (e.g. for SiC). The pyrometer based temperature measurement system enables processes at low and high temperatures. Independent lamp control combined with predictive PID control provides excellent thermal accuracy and repeatability. The c.RAPID 200 operates with a fully automatic loading system.
     
    TYPICAL APPLICATIONS
    Box processing for
    - Nickel silicide formation for SiC
    - Annealing of GaN on Si or SiC
     
    FEATURES & BENEFITS
    - Pressure controlled vacuum or atmospheric use
    - High flexibility: Substrates up to 150 mm on susceptor or in boxes
    - Ramp rate up to 40 K/s (150 mm silicon wafer within a box)
    - Excellent temperature uniformity
    - Precise ambient control
    - High reliability
    - Side by side installation possible (configuration with 2 cassette stations)
    - Automatic loading system

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