centrotherm international AG

  • Booth: M0556
  • - 4th Floor

Welcome to centrotherm international AG.

centrotherm has been developing and realizing innovative thermal solutions for over 70 years. As a leading and globally operating technology group, we offer production solutions for the semiconductor, microelectronic and photovoltaics industries.

Our equipment is designed for all needs from R&D to mass production and applicable for various semiconductor technologies and applications, such as logic and memory devices (e.g. Flash, DRAM) power semiconductors (e.g. Si, SiC), LED, SMT, MEMS or sensor technology: The product portfolio comprises horizontal and vertical batch furnaces (atmospheric or vacuum processes), vertical high temperature furnaces (annealing < 2050°C, oxidation < 1350°C), single wafer systems < 300mm wafer diameter (RTP, low-temperature microwave oxidation).

Additionally we offer vacuum soldering systems and conveyor furnaces for thermally activated processes, such as thick film processes (drying and sintering) or DCB (remelting and connection), LTCC and MLCC manufacturing (firing).


  • c.HORICOO 200
    Horizontal batch-type process system for multifold applications<br /><br />...

  • The centrotherm c.HORICOO 200 is a field-proven and ultra-versatile tube furnace system that is available for mass and medium volume production as well as for Research and Development.

    It provides reliable process capabilities and high process performance for multiple applications, such as atmospheric and low pressure diffusion as well as LPCVD and PECVD processes. The process tubes can be configured for various processes with associated facilities (atmospheric, vacuum or mixed).

    All furnaces are equipped with an integrated boat handling that enables the storage of up to 8 process boats as well as an integrated wafer transfer system. Outside influences are minimized by water-cooled heating cassettes and a soft-landing system. Ease of maintenance ensures low cost of ownership and a high uptime.


    Atmospheric processes

    • Wet and dry oxidation (DCE, HCl)
    • Diffusion (e.g. POCl3, BBr3)
    • Annealing (H2, N2)
    • Activation annealing
    • Contact sintering
    • Curing
    • Nitridation
    • Silicidation

    LPCVD processes

    • Polysilicon and amorphous silicon
    • Doped Polysilicon
    • Silicon Nitride
    • Low stress Nitride
    • TEOS | PSG | BPSG
    • LTO | HTO
    • Oxynitride
    • SIPOS

    PECVD processes

    • PECVD Nitride
    • PECVD Oxide
    • PECVD Oxynitride

    Special processes

    • Low-pressure diffusion (POCl3)
    • Gallium diffusion
    • Aluminum pre-deposition/diffusion
  • c.HORICOO 300
    Next-generation horizontal system for high-throughput 300 mm wafer processing...

  • The centrotherm c.HORICOO 300 horizontal batch-type system is designed for 300 mm wafer processing with reliable performance in mass production. Based on centrotherm‘s extensive expertise in the semiconductor industry, c.HORICOO 300 is the new high-throughput platform for state-of-the-art wafer processing.

    The heating system comprises 5 dual-zone heating elements that provide unmatched temperature uniformity as well as an optimal and steady process. The centrotherm Hydrox system supports wet oxidation processes with different moisture levels.

    Temperatures up to 1200 °C allow faster oxidation and shorter drive-in processes.

    The system is equipped with a modern touch operating HMI and factory-host coupling for MES connection. The latest CESAR II software enables a SEMI-compliant recipe management as well as remote control and maintenance.

    The modular concept of c.HORICOO 300 also allows a single 4-stack version for lower throughput requirements.


    • Wet and dry oxidation (DCE, HCl)
    • Annealing (N2)
    Vertical wafer process system for R&D and production of Si-based semiconductors...

  • The centrotherm c.VERTICOO platform for batch-type wafer processing is ideally suited for many semiconductor device fabrication steps. The special design of process chamber and heating system provides maximum flexibility for all standard atmospheric and LPCVD processes with temperatures up to 1100 °C.

    The stand-alone system is available as high-throughput version for mass production or mini-batch equipment for R&D and low-volume production. Both models are outstanding for high performance, small footprint, low cost of ownership and ease of maintainance.

    The high-volume furnace c.VERTICOO 200 combines a single-tube setup with dual boat logistics and fully automated carrier-to-carrier wafer handling ensuring maximum throughput with batch sizes up to 150 wafers.

    The mini-batch furnace c.VERTICOO Mini meets the demanding requirements of semiconductor device R&D and allows customers to reduce development costs by processing a maximum of 50 wafers per batch.


    Atmospheric processes

    • Diffusion
    • Dry oxidation
    • Wet oxidation (centrotherm Hydrox)
    • Annealing (H2, N2)

    LPCVD processes

    • Polysilicon (doped, undoped)
    • Silicon nitride
    • Silicon oxynitride
    • TEOS oxide
    • High-temperature oxide
  • c.ACTIVATOR 150
    High-temperature furnace for SiC annealing in Ar, N2 and H2 ambient...

  • The centrotherm c.ACTIVATOR 150 high-temperature furnace has been developed for annealing applications in Silicon Carbide (SiC) device manufacturing. It is especially designed for high-volume production. The unique design of the centrotherm process tube and heating system allows process temperatures up to 2000 °C.

    The most common application is the electrical activation by post implantation annealing at high temperatures of up to 2000°C.

    In addition carbon vacancies (Vc) can be annihilated by long post annealing just below the temperature at which the Vc generation starts (~1500 °C). This process reduces Vc density and enhances carrier lifetimes.

    In the production of SiC trench MOSFETs it is important to eliminate excessive E-fields at sharp trench corners. In order to enhance channel mobility, the trench has to be cleaned and smoothed. This can be achieved by high-temperature hydrogen annealing.

    Further applications are Post Implantation Annealing of GaN and a wide range of high-temperature annealing in O2-free ambient.


    • SiC annealing
    • H2 annealing for trench optimization
    • GaN annealing
    • High-temperature annealing in O2-free ambient
  • c.OXIDATOR 150
    High-temperature furnace for Si and SiC oxidation...

  • The centrotherm c.OXIDATOR 150 high-temperature oxidation furnace has been developed for the special needs of SiC oxidation but can also be used for silicon oxidation. It is designed for high-volume production. Thanks to the optional centrotherm Hydrox system c.OXIDATOR 150 also supports wet oxidation.

    Temperatures up to 1500 °C and all other supported features open up new possibilities to SiC oxidation and the development of an oxide layer with low interface trap density (Dit) and high channel mobility.

    The outstanding reactor has been designed for high performance, small footprint and low cost of ownership while offering highest process flexibility.

    The tube and the heating element inside the vacuum reactor chamber are designed to allow a safe use of toxic gases like O2, N2O, NO or WetOx. Post oxidation annealing in NO atmosphere leads to an improved SiO2/SiC interface, hence to higher channel mobility as well as improved stability and longevity of the oxide on SiC.


    • High-temperature Si and SiC oxidation
    • Post oxidation annealing (POA) in NO and N2O
    • Wet oxidation
  • c.RAPID 200
    Rapid Thermal Processing system for silicon and compound semiconductors...

  • The stand-alone RTP system c.RAPID 200 has been especially developed for multiple process requirements in R&D and production lines. High performance and flexibility combined with low cost of ownership make it the best choice in rapid thermal processing.

    The capability to run a substrate on a susceptor or within a box in combination with atmospheric or vacuum operation enables a wide range of possible applications for compound semiconductors (e.g. for SiC or GaN).

    Its wafer surface-independent temperature controllability is unique among all existing RTP solutions. The pyrometer-based temperature measurement system enables processes at low and high temperatures. Independent lamp control combined with predictive PID control provides excellent thermal accuracy and repeatability.

    c.RAPID 200 operates with a fully automatic loading system and is available as single or dual chamber version and with up to 4 cassette stations.


    • Rapid Thermal Annealing (RTA)

               - Ion implant annealing
               - Contact/metal anneal
               - Source/drain anneal

    • Rapid Thermal Oxidation (RTO)
    • Silicide formation (Ti, Co, Ni, Pt, etc.)
    • PSG reflow
    • Dopant activation