GaN Power Technology Co., Ltd.

台中市,
Taiwan

Booth: I2017
- 1st Floor

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Welcome to GaN Power Technology

Welcom to GaN Power Technology

We are the exclusive company in the world authorized with excellent gallium nitride epitaxial technology from NTTAT, with an outstanding power device product design team, to provide our customers completed GaN FET power devices and services.

Products

氮化鎵磊晶片 (EPI wafer) ，氮化鎵製程片及晶粒，氮化鎵功率元件 HEMT

1) 矽基氮化鎵磊晶片 : 6 吋矽基氮化鎵磊晶片 (EPI wafer ) 2) 矽基氮化鎵製程片及晶粒: 6 吋 650V GaN on Si 製程片及晶粒片 ( Process wafer 及 Die wafer) 3) 氮化鎵功率元件 : TO-220, DFN 5060, DFN 8080 ... More Info Less Info

氮化鎵

氮化鎵產品	名稱	基本規格	備註
氮化鎵磊晶片	GaN EPI	耐壓 650V, D-mode HEMT	GaN on Si
氮化鎵製程片	GaN Wafer	耐壓 650V , 25A/12A/5A/140mA	未切割製程片
氮化鎵晶粒	GaN Die	耐壓 650V , 25A/12A/5A/140mA	置於藍膜
氮化鎵電晶體	GaN FET	耐壓 650V , 25A/12A/5A/140mA	TO220 (25A) QFN 5060 /8080(25A, 15A) 3535B (140mA)

氮化鎵產品	名稱	基本規格	備註
氮化鎵磊晶片	GaN EPI	耐壓 650V, D-mode HEMT	GaN on Si
氮化鎵製程片	GaN Wafer	耐壓 650V , 25A/12A/5A/140mA	未切割製程片
氮化鎵晶粒	GaN Die	耐壓 650V , 25A/12A/5A/140mA	置於藍膜
氮化鎵電晶體	GaN FET	耐壓 650V , 25A/12A/5A/140mA	TO220 (25A) QFN 5060 /8080(25A, 15A) 3535B (140mA)

產品

名稱

基本規格

備註

TO220 (25A)
QFN 5060 /8080(25A, 15A)
3535B (140mA)

GaN EPI wafer , GaN Process wafer and GaN FET

1) 6 inches , 650V GaN on Si EPI wafer , D mode 2) 6 inches, 650V GaN on Si Process wafer and die wafer 3) GaN power devices : 650V TO-220 (25A), DFN 5060 / DFN 8080 (25A，15A) and 3535 (140mA)... More Info Less Info

1) GaN EPI wafer: 6 inches 650V GaN on Si EPI wafer with D mode

2) GaN Process wafer and Die wafer : 6 inches 650V GaN on Si Process wafer , and Die wafer ( after cutting)

3) GaN Power devices: i) 650V TO-220, ii) 650V DFN 5060 and DFN 8080 (25A, 15A) , iii) 650V 3535B (140mA)

... More Info Less Info

GaN Power Technology Co., Ltd.

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