CVD SILICON CARBIDFM Components for Semiconductor Processing Equipment
Recognized as the premier choice for RTP/epi rings and susceptors and plasma etch chamber components, solid CVD SILICON CARBIDE''M Components excel where high temperatures (>1500oq, ultra-high purity (>99.9995%) and chemical resistance are system requirements. The material contains no secondary phases at grain boundaries resulting in components with lower particle generation than other materials. In addition, these components can be cleaned in hot HF/HCI with minor degradation resulting in very low particle generation and longer life.
CVD SILICON CARBIDETM Material attributes:
- Low coefficient of thermal expansion
- High thermal conductivity
- High strength and stiffness
- Theoretical density with no porosity
- Lightweight
- High hardness
These attributes lead to performance advantages:
- Resistance to wear and abrasion
- Resistance to corrosion, oxidation and erosion
- Performance at high temperatures (up to 1700°C)
- Polishable to <3 Å RMS