The centrotherm c.OXIDATOR 150 high-temperature oxidation furnace has been developed for the special needs of SiC oxidation but can also be used for silicon oxidation. It is designed for high-volume production. Thanks to the optional centrotherm Hydrox system c.OXIDATOR 150 also supports wet oxidation.
Temperatures up to 1500 °C and all other supported features open up new possibilities to SiC oxidation and the development of an oxide layer with low interface trap density (Dit) and high channel mobility.
The outstanding reactor has been designed for high performance, small footprint and low cost of ownership while offering highest process flexibility.
The tube and the heating element inside the vacuum reactor chamber are designed to allow a safe use of toxic gases like O2, N2O, NO or WetOx. Post oxidation annealing in NO atmosphere leads to an improved SiO2/SiC interface, hence to higher channel mobility as well as improved stability and longevity of the oxide on SiC.
- High-temperature Si and SiC oxidation
- Post oxidation annealing (POA) in NO and N2O
- Wet oxidation