Scientech provides 4” & 6” SiC wafer reclaim service by professional reclaim technique, new equipment/ utility and advanced process technology for high quality SiC substrates.
Process Capability
- Surface roughness, Ra: ~1nm
- TTV: < 3um
- Surface roughness, Ra: ~1A
- Surface cleanness, LPD <0.3um
- Surface Metal < 1E10 Atoms/cm2 (By ICP-MS)
- Inspection(Geometry/ Defect)
- FRT/ Candela