Si DRIE
With an installed base of >1500 DRIE process modules, SPTS’s industry-leading position is spearheaded by the Rapier™ module, which etches Si using Bosch switched processing as well as non-switched etching for tapered profiles, wafer thinning and via reveal.
Patented dual plasma source design with independently controlled primary and secondary decoupled plasma zones, with independent dual gas inlets. This results in a highly concentrated and uniformed distribution of radicals offering high etch rate, excellent uniformity and controls tilting of deep features across the wafer. Inherent multi-mode flexibility also allows complementary oxide etching within the same hardware.
ICP
SPTS ICP process module is highly flexible and etches a wide range of materials including oxides, nitrides, polymers, low aspect ratio Si and metals. The Omega® ICP process module uses a patented high density plasma source incorporating a radial coil design. The ICP module is the industry leader for compound semiconductor applications.
Typical materials include GaAs, GaN, SixNy, BCB and Polyimide.
Synapse
Omega® Synapse™ etch process module uses a high density plasma source and is designed to etch strongly bonded materials SiO2, Glass, SiNx, SiC, GaN, Al2O3, PZT and AlN,
Higher plasma density means higher etch rate of strongly bonded materials and the capability of running at reduced pressure. The latter extends mean free paths and leads to better directionality and less by-product ‘fencing’.
The process chamber can be heated to ~130ºC to reduce the amount of by-product deposition and improve MTBC. The chamber is also surrounded by permanent magnets which result in a higher plasma density than conventional ICPs (by a factor of ~10x).