1) GaN EPI wafer: 6 inches 650V GaN on Si EPI wafer with D mode
2) GaN Process wafer and Die wafer : 6 inches 650V GaN on Si Process wafer , and Die wafer ( after cutting)
3) GaN Power devices: i) 650V TO-220, ii) 650V DFN 5060 and DFN 8080 (25A, 15A) , iii) 650V 3535B (140mA)