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3-dimensional wafer-level-packaging (WLP) is the most suitable for miniaturizing semiconductor devices. It also can improve the high-frequency properties of the devices with the metal via.

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Hi-precision cavities can be formed inside of the glass wafer. With transparent and thinner finish on the cavity bottom, it can work as a window which transmits laser light or LED light without distortion, or through which observation is possible by an oil immersion microscope.

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This is a heat sink for high-power LD (Laser diode) modules. Three-layer composition achieves both high thermal conductivity and insulation quality. Control of Cu plating thickness makes the heat sink match with the LD, resulting in higher power and longer life of the LD module. Because pullback is not required on the critical edge area, it has a high degree of freedom in designing. Moreover, it can be applied to a variety of application by this freedom in design.

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This material features an excellent thermal conductivity and a relatively low thermal expansion that no past materials were capable of. Combining our conventional ingenious technology and experience, we have succeeded in creating a long-lasting, reliable material beneficial for high power applications.

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By eliminating the base part, the All-blade core drill composed entirely of whetstone made it possible for longer life of the tool and moreover the extremely thin cutting edge improves processing quality.

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Anodic bonding with a silicon wafer can result in solving the out-gas issue. It can be used in the wafer-level-packaging (WLP) process.

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