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WINSHENG MATERIAL TECHNOLOGY CO., LTD.

New Taipei City,  Taiwan
http://www.win-sheng.com/index.aspx
  • Booth: J3238

WMT look forward to your visit.

Overview

WMT was professional manufacturer of SiC ingot and wafer, and provided 4 and 6 inch n-type and semi-insulating, SI SiC wafer.

  Press Releases

  • The 8 inch samples are expected to be exhibited in Q4 2023. The 8 inch SiC wafer would be produced in Q3 2024, and it would be a lot chance for mass production.
  • (Jun 27, 2023)
  • (Jun 27, 2023)

  Products

  • 4 inch Diameter 4H N-type Silicon Carbide Substrat
    SiC devices could realize high blocking voltage, low current loss, and high-temperature operation. Power SiC achieve a significant reduction in energy consumption, and can be used to develop smaller products....

    • ◈Diameter   100mm+0.0/-0.5mm

    ◈Thickness   50 μm ± 25.0 μm

    ◈Resistivity   0.015 Ω·cm ~ 0.025 Ω·cm

    ◈TTV        ≦10 μm

    ◈BOW      ≦25 μm

    ◈WARP     ≦40 μm
  • 6 inch Diameter 4H N-type Silicon Carbide Substrat
    SiC devices could realize high blocking voltage, low current loss, and high-temperature operation. Power SiC achieve a significant reduction in energy consumption, and can be used to develop smaller products....

    • ◈Diameter   150mm±0.25mm

    ◈Thickness   350 μm ± 25.0 μm

    ◈Resistivity   0.015 Ω·cm ~ 0.025 Ω·cm

    ◈TTV        ≦10 μm

    ◈BOW       ≦30 μm

    ◈WARP      ≦40 μm
  • 4 inch Diameter 4H SI Silicon Carbide Substrate
    Semi-insulating SiC wafer was the key substrate materials for power amplifiers (PA) in the development of millimeter-wave communication, and that would be applied in 5G communication, radar, satellite, and other fields....

    • ◈Diameter   100mm±0.0/-0.5mm

    ◈Thickness   500 μm ± 25.0 μm

    ◈Resistivity   ≧1E8Ω·cm

    ◈TTV        ≦10 μm

    ◈BOW       ≦25μm

    ◈WARP      ≦40 μm
  • 4 inch 4H N-type Ingot
    SiC devices could realize high blocking voltage, low current loss, and high-temperature operation. Power SiC achieve a significant reduction in energy consumption, and can be used to develop smaller products....

    • ◈Resistivity              0.015Ω·cm~0.025Ω·cm

    ◈Diameter               100.25mm±0.25mm

    ◈Surface orinentation error   4°toward<11-20>±0.2°

    ◈Primary flat orinentation    <1-100>±5°

    ◈Primary flat length        32.5mm±1.5mm

    ◈Secondary flat orinentation 

    90.0°CW from Primary Flat±5.0°,Silicon Face Up

    ◈Secondary flat length      18mm±1.5mm

  • 6 inch 4H N-type Ingot
    SiC devices could realize high blocking voltage, low current loss, and high-temperature operation. Power SiC achieve a significant reduction in energy consumption, and can be used to develop smaller products....

    • ◈Resistivity              0.015Ω·cm~0.025Ω·cm

    ◈Diameter               150.25mm±0.25mm

    ◈Surface orinentation error   4°toward<11-20>±0.2°

    ◈Primary flat orinentation    <1-100>±5°

    ◈Primary flat length        47.5mm±1.5mm

    ◈Secondary flat orinentation  N/A

    ◈Secondary flat length      N/A

Categories

308 Materials, Substrate
  • Compound Semiconductor substrates (GaAs on Silicon; GaN; InP; SiGe, etc.)
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