CA-1000 is Catalyst-Referred Etching-based nanofabrication and finishing technology that has high potential and applicability to semiconductor material polishing.
CA-1000 is equipped with a catalyst pad as a reference surface. Unlike CMP, CA-1000 only uses water as an etchant which is compatible with clean-room environment.
During the planarization, the selective etching is promoted at the topmost areas in contact with the catalyst surface. Thanks to selective chemical etching, CA-1000 could effectively improve surface roughness to sub-Anstrom Ra without changing the thickness uniformity of various functional materials, such as quartz, silica glass, Si, LN, LT, and sapphire.
CA-1000 是基於催化劑遞延蝕刻技術的納米製造和精加工技術,在半導體材料拋光方面具有很高的潛力和適用性。
CA-1000 配備了一個催化劑墊作為參考表面。與 CMP 不同,CA-1000 只使用水作為蝕刻劑,與無塵室環境兼容。
在平面化過程中,選擇性蝕刻在與催化劑表面接觸的最頂端區域進行。由於採用了選擇性化學蝕刻技術,CA-1000 可以有效地將石英、矽玻璃、矽、LN、LT 和藍寶石等各種功能材料的表面粗糙度提高到sub-Anstrom Ra,而不會改變其厚度均勻性。