VDS(SUS) at the current value specified by the IH can also be measured.
With the conventional measurement method, applied current is limited by applied voltage, moreover, the MOSFET has a characteristic that as the ON Resistance lowers the current required to measure increases; thus, the method became difficult to measure the MOSFET of medium breakdown voltage (several tens of voltage).
To accomplish the task, new measurement methods* are added to perform the high current measurement, and the voltage and current this tester can apply are respectively increased to 300 V and 200 A so that it is now capable of measuring wider range of devices.
*The VD-OFF mode is added to separate the VD power at Avalanche and the Time-Trip mode is added to turn the devices off after the applying current for specified time.
Feature
・N/P channel measurement with one test head
・Peak Current (IDP) measurement at Avalanche test
・Gate ON Time measurement
・Repeat test up to 250 times
・Multi-test function (with fixed VD)
・60 test programs can be stored
・Programmable coil automates the coil switching (Option)
・VD-OFF mode (Optimized for Low ON Resistance MOSFET)
・Self-Check Function
・Time-Trip mode
■Optional Software Examples
・Software to control the tester from PC
(Test program creation, data collection, and counter collection)